| 数据搜索系统,热门电子元器件搜索 |
|
FN6295 数据表(PDF) 5 Page - Renesas Technology Corp |
|
|
|||||||||||||||||||||||||||||
FN6295 数据表(HTML) 5 Page - Renesas Technology Corp |
|
5 / 17 page ![]() ISL2110, ISL2111 FN6295 Rev.8.01 Page 5 of 16 Oct 2, 2023 ISL2110ABZ, ISL2111ABZ (8 LD SOIC) TOP VIEW ISL2111BR4Z (8 LD 4x4 DFN) TOP VIEW Pin Configurations 5 6 8 7 4 3 2 1 VDD HB HO HS LO LI HI VSS 2 3 4 1 7 6 5 8 VDD HB HO HS LO VSS LI HI EPAD* *EPAD = EXPOSED PAD Pin Descriptions SYMBOL DESCRIPTION VDD Positive supply to lower gate driver. Bypass this pin to VSS. HB High-side bootstrap supply. External bootstrap capacitor is required. Connect positive side of bootstrap capacitor to this pin. Bootstrap diode is on-chip. HO High-side output. Connect to gate of high-side power MOSFET. HS High-side source connection. Connect to source of high-side power MOSFET. Connect negative side of bootstrap capacitor to this pin. HI High-side input LI Low-side input VSS Chip negative supply, which will generally be ground. LO Low-side output. Connect to gate of low-side power MOSFET. NC No connect EPAD Exposed pad. Connect to ground or float. The EPAD is electrically isolated from all other pins. |
|
|
链接网址 |
| ALLDATASHEET是否为您带来帮助? [ DONATE ] |
关于 Alldatasheet | 广告服务 | 联系我们 | 隐私政策 | 数据表链接 | 链接交换 | 制造商名单 All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |