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FN6295 数据表(PDF) 6 Page - Renesas Technology Corp

部件名 FN6295
功能描述  100V, 3A/4A Peak, High Frequency Half-Bridge Drivers
PDF  17 Pages
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制造商  RENESAS [Renesas Technology Corp]
网页  http://www.renesas.com
标志 RENESAS - Renesas Technology Corp

FN6295 数据表(HTML) 6 Page - Renesas Technology Corp

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ISL2110, ISL2111
FN6295 Rev.8.01
Page 6 of 16
Oct 2, 2023
Absolute Maximum Ratings
Thermal Information
Supply Voltage, VDD, VHB - VHS (Notes 4, 5) . . . . . . . . . . . . . . . 0.3V to 18V
LI and HI Voltages (Note 5) . . . . . . . . . . . . . . . . . . . . . . . -0.3V to VDD + 0.3V
Voltage on LO (Note 5). . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to VDD + 0.3V
Voltage on HO relative to HS (Repetitive Transient < 100ns). . . . . . . . . -2V
Voltage on LO relative to GND (Repetitive Transient < 100ns). . . . . . . . -2V
Voltage on HO (Note 5) . . . . . . . . . . . . . . . . . . . . . .VHS - 0.3V to VHB + 0.3V
Voltage on HS (Continuous) (Note 5) . . . . . . . . . . . . . . . . . . . . . -1V to 110V
Voltage on HB (Note 5) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 118V
Average Current in VDD to HB Diode . . . . . . . . . . . . . . . . . . . . . . . . . 100mA
Maximum Recommended Operating
Conditions
Supply Voltage, VDD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8V to 14V
Voltage on HS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -1V to 100V
Voltage on HS . . . . . . . . . . . . . (Repetitive Transient < 100ns) -5V to 105V
Voltage on HB . . . . . . . . . . .VHS+7V to VHS+14V and VDD - 1V to VDD+100V
HS Slew Rate. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . <50V/ns
Thermal Resistance (Typical)
JA (°C/W) JC (°C/W)
8 Ld SOIC (Notes 6, 9) . . . . . . . . . . . . . . . . .
95
46
10 Ld TDFN (Notes 7, 8) . . . . . . . . . . . . . . .
40
2.5
12 Ld DFN (Notes 7, 8) . . . . . . . . . . . . . . . .
39
2.5
8 Ld DFN (Notes 7, 8). . . . . . . . . . . . . . . . . .
40
4.0
Max Power Dissipation at +25°C in Free Air
8 Ld SOIC (Notes 6, 9) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.3W
10 Ld TDFN (Notes 7, 8) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.0W
12 Ld DFN (Notes 7, 8) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.1W
8 Ld DFN (Notes 7, 8) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.1W
Storage Temperature Range. . . . . . . . . . . . . . . . . . . . . . . .-65°C to +150°C
Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . .-55°C to +150°C
Pb-Free Reflow Profile . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . see TB493
CAUTION: Do not operate at or near the maximum ratings listed for extended periods of time. Exposure to such conditions may adversely impact product reliability and
result in failures not covered by warranty.
NOTES:
4. The ISL2110 and ISL2111 are capable of derated operation at supply voltages exceeding 14V. Figure 24 shows the high-side voltage derating curve
for this mode of operation.
5. All voltages referenced to VSS unless otherwise specified.
6.
JA is measured with the component mounted on a high-effective thermal conductivity test board in free air. See Tech Brief TB379 for details.
7.
JA is measured in free air with the component mounted on a high-effective thermal conductivity test board with “direct attach” features. See Tech
Brief TB379.
8. For
JC, the “case temp” location is the center of the exposed metal pad on the package underside.
9. For
JC, the “case temp” location is taken at the package top center.
Electrical Specifications VDD = VHB = 12V, VSS = VHS = 0V, no load on LO or HO, unless otherwise specified.
PARAMETERS
SYMBOL
TEST CONDITIONS
TJ = +25°C
TJ = -40°C to +125°C
UNIT
MIN
(Note 10)TYP
MAX
(Note 10)
MIN
(Note 10)
MAX
(Note 10)
SUPPLY CURRENTS
VDD Quiescent Current
IDD
ISL2110; LI = HI = 0V
-
0.10
0.25
-
0.30
mA
VDD Quiescent Current
IDD
ISL2111; LI = HI = 0V
-
0.30
0.45
-
0.55
mA
VDD Operating Current
IDDO
ISL2110; f = 500kHz
-
3.4
5.0
-
5.5
mA
VDD Operating Current
IDDO
ISL2111; f = 500kHz
-
3.5
5.0
-
5.5
mA
Total HB Quiescent Current
IHB
LI = HI = 0V
-
0.10
0.15
-
0.20
mA
Total HB Operating Current
IHBO
f = 500kHz
-
3.4
5.0
-
5.5
mA
HB to VSS Current, Quiescent
IHBS
LI = HI = 0V; VHB = VHS = 114V
-
0.05
1.50
-
10
µA
HB to VSS Current, Operating
IHBSO
f = 500kHz; VHB = VHS = 114V
-
1.2
-
-
-
mA
INPUT PINS
Low Level Input Voltage Threshold
VIL
ISL2110
3.7
4.4
-
3.5
-
V
Low Level Input Voltage Threshold
VIL
ISL2111
1.4
1.8
-
1.2
-
V
High Level Input Voltage Threshold
VIH
ISL2110
-
6.6
7.4
-
7.6
V
High Level Input Voltage Threshold
VIH
ISL2111
-
1.8
2.2
-
2.4
V
Input Voltage Hysteresis
VIHYS
ISL2110
-
2.2
-
-
-
V



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