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L6206PD 数据表(PDF) 8 Page - STMicroelectronics |
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L6206PD 数据表(HTML) 8 Page - STMicroelectronics |
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8 / 29 page ![]() Electrical characteristics L6206 8/29 DocID07617 Rev 4 4 Electrical characteristics Table 5. Electrical characteristics (Tamb = 25 °C, Vs = 48 V, unless otherwise specified) Symbol Parameter Test conditions Min. Typ. Max. Unit VSth(ON) Turn-on threshold - 6.6 7 7.4 V VSth(OFF) Turn-off threshold - 5.6 6 6.4 V IS Quiescent supply current All bridges OFF; Tj = -25 °C to 125 °C(1) -5 10 mA Tj(OFF) Thermal shutdown temperature - - 165 - C Output DMOS transistors RDS(ON) High-side switch ON resistance Tj = 25 °C - 0.34 0.4 Tj = 125 °C(1) - 0.53 0.59 Low-side switch ON resistance Tj = 25 °C - 0.28 0.34 Tj = 125 °C(1) - 0.47 0.53 IDSS Leakage current EN = low; OUT = VS -- 2 mA EN = low; OUT = GND -0.15 - - mA Source drain diodes VSD Forward ON voltage ISD = 2.8 A, EN = low - 1.15 1.3 V trr Reverse recovery time If = 2.8 A - 300 - ns tfr Forward recovery time - - 200 - ns Logic input VIL Low level logic input voltage - -0.3 - 0.8 V VIH High level logic input voltage - 2 - 7 V IIL Low level logic input current GND logic input voltage -10 - - µA IIH High level logic input current 7 V logic input voltage - - 10 µA Vth(ON) Turn-on input threshold - - 1.8 2.0 V Vth(OFF) Turn-off input threshold - 0.8 1.3 - V Vth(HYS) Input threshold hysteresis - 0.25 0.5 - V Switching characteristics tD(on)EN Enable to out turn ON delay time(2) ILOAD = 2.8 A, resistive load 100 250 400 ns tD(on)IN Input to out turn ON delay time ILOAD = 2.8 A, resistive load (deadtime included) -1.6 - µs tRISE Output rise time(2) ILOAD = 2.8 A, resistive load 40 - 250 ns tD(off)EN Enable to out turn OFF delay time(2) ILOAD = 2.8 A, resistive load 300 550 800 ns tD(off)IN Input to out turn OFF delay time ILOAD = 2.8 A, resistive load - 600 - ns tFALL Output fall time(2) ILOAD = 2.8 A, resistive load 40 - 250 ns |
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