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STM32MP151AAB3T 数据表(PDF) 128 Page - STMicroelectronics |
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STM32MP151AAB3T 数据表(HTML) 128 Page - STMicroelectronics |
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128 / 245 page ![]() Electrical characteristics STM32MP151A 128/245 DS12500 Rev 1 6.3.3 Embedded reset and power control block characteristics The parameters given in Table 15 are derived from tests performed under ambient temperature and VDD supply voltage conditions summarized in Table 13: General operating conditions. Table 15. Embedded reset and power control block characteristics Symbol Parameter Conditions Min Typ Max Unit tRSTTEMPO(1) Reset temporization. after BOR0 released - - 377 550 µs VBOR0(1) Brown-out reset threshold 0 Rising edge 1.62 1.67 1.71 V Falling edge 1.58 1.63 1.67 VBOR1 Brown-out reset threshold 1 Rising edge 2.055 2.1 2.145 V Falling edge 1.955 2 2.045 VBOR2 Brown-out reset threshold 2 Rising edge 2.355 2.4 2.445 V Falling edge 2.255 2.3 2.345 VBOR3 Brown-out reset threshold 3 Rising edge 2.655 2.7 2.745 V Falling edge 2.555 2.6 2.645 VPVD0 Programmable Voltage Detector threshold 0 Rising edge 1.905 1.95 1.995 V Falling edge 1.805 1.85 1.895 VPVD1 Programmable Voltage Detector threshold 1 Rising edge 2.055 2.1 2.145 V Falling edge 1.955 2 2.045 VPVD2 Programmable Voltage Detector threshold 2 Rising edge 2.205 2.25 2.295 V Falling edge 2.105 2.15 2.195 VPVD3 Programmable Voltage Detector threshold 3 Rising edge 2.355 2.4 2.445 V Falling edge 2.255 2.3 2.345 VPVD4 Programmable Voltage Detector threshold 4 Rising edge 2.505 2.55 2.595 V Falling edge 2.405 2.45 2.495 VPVD5 Programmable Voltage Detector threshold 5 Rising edge 2.655 2.7 2.745 V Falling edge 2.555 2.6 2.645 VPVD6 Programmable Voltage Detector threshold 6 Rising edge 2.805 2.85 2.895 V Falling edge in RUN mode 2.705 2.75 2.795 Vhyst_BOR0 Hysteresis voltage of BOR0 Hysteresis in RUN mode -40 - mV Vhyst_BOR Hysteresis voltage of BOR Unless BOR0 - 100 - mV Vhyst_BOR_PVD Hysteresis voltage of BOR (unless BOR0) and PVD(2) Hysteresis in RUN mode - 100 - mV IDD_BOR_PVD(1)(3) BOR (unless BOR0) and PVD consumption from VDD 0.246 - 0.626 µA |
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