STM32MP151AAB3T datasheet(126/245 Pages) STMICROELECTRONICS

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Electrical characteristics

STM32MP151A

126/245

DS12500 Rev 1

6.3.1

General operating conditions

6.3.2

Operating conditions at power-up / power-down

Subject to general operating conditions.

Table 14. Operating conditions at power-up / power-down

Symbol

Parameter

Min

Max

Unit

tVDD(1)

1. VDD must be present before VDDCORE .

VDD rise time rate

∞

µs/V

VDD fall time rate

∞

tVDDA

VDDA rise time rate

∞

VDDA fall time rate

∞

tVDD3V3_USB(2)

tVDD3V3_USBHS

tVDD3V3_USBFS

2. VDDA1V8_REG must be present before VDD3V3_USBHS.

VDD3V3_USBxx rise time rate

∞

VDD3V3_USBxx fall time rate

∞

tVDDCORE

VDDCORE rise time rate (from

reset to RUN mode)

2000(3)

3. In case VDDCORE rise time is larger than 2 ms/V, user should control the NRST_CORE signal with a Power

Good (PG) control signal from the external regulator to avoid dysfunction of the device due to VDDCORE

potentially not yet established when internal reset signal is de-activated after tVDDCORETEMPO (cf.Table 14

and Figure 13).

VDDCORE rise time rate (from

LPLV-Stop to RUN mode)

1000(4)

4. In case VDDCORE rise time at exit of LPLV-Stop is larger than 1 ms/V, there is a risk of unwanted reset due

to VDDCORE potentially not yet established after tSEL_VDDCORETEMPO (cf.Table 14 and Figure 14). In such a

case, the VDDCORE supply should not be decreased during LPLV-Stop mode.

VDDCORE fall time rate

7.33

∞

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