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BT151-600-R 数据表(PDF) 4 Page - Shenzhen Luguang Electronic Technology Co., Ltd |
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BT151-600-R 数据表(HTML) 4 Page - Shenzhen Luguang Electronic Technology Co., Ltd |
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4 / 5 page ![]() BT151-500R/-600R/-800R 12A Silicon Controlled Rectifiers http:// www.lgesemi.com Revision:20240716-P4 mail:lge@lgesemi.com RATING AND CHARACTERISTICS CURVES Tj (°C) - 50 150 100 0 50 1 2 3 0 IGT IGT(25°C) Fig. 7. Normalized gate trigger current as a function of junction temperature Tj (°C) - 50 150 100 0 50 1 2 3 0 IL IL(25°C) Fig. 8. Normalized latching current as a function of junction temperature Tj (°C) - 50 150 100 0 50 1 2 3 IH IH(25°C) 0 Fig. 9. Normalized holding current as a function of junction temperature VT (V) 0 2 1.5 0.5 1 10 20 30 IT (A) 0 (3) (2) (1) Vo = 1.06 V; Rs = 0.0304 Ω (1) Tj = 125 °C; typical values (2) Tj = 125 °C; maximum values (3) Tj = 25 °C; maximum values Fig. 10. On-state current as a function of on-state voltage 001aaa949 103 102 104 dVD/dt (V/µs) 10 Tj (°C) 0 150 100 50 (2) (1) (1) RGK = 100 Ω; (2) gate open circuit Fig. 11. Critical rate of rise of off-state voltage as a function of junction temperature; minimum values Tj (°C) - 50 150 100 0 50 001aaa953 0.8 1.2 1.6 0.4 VGT VGT(25°C) Fig. 12. Normalized gate trigger voltage as a function of junction temperature |
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