BT151-500R/-600R/-800R

12A Silicon Controlled Rectifiers

http://

www.lgesemi.com

Revision:20240716-P2

mail:lge@lgesemi.com

ELECTRICAL CHARACTERISTICS(Tj=25℃ unless otherwise specified)

PARAMETER

TEST CONDITIONS

SYMBOL

VALUE

UNITS

Gate Trigger Current

VD=12V,IT=0.1A

IGT

MAX

15

mA

Gate Trigger Voltage

VD=12V,RL=30Ω

VGT

MAX

1.5

V

Gate Non-Trigger Voltage VD=VDRM,Tj=125℃,

RL=3.3KΩ,RGK=1KΩ

VGD

MIN

0.25

V

Holding Current

IT=0.1A

IH

MAX

20

mA

Latching Current

IT=1.2IGT

IL

MAX

40

mA

Critical rate of rise of

on-state current

Tj=125℃,IG=2×IGT,

tr≤100ns

di/dt

MIN

50

A/μs

Critical Rate of Rise of Off-State Voltage

VD=2/3VDRM,Tj=125℃

dv/dt

MIN

500

V/μs

Critical Rate of Rise of Off-State Voltage at

Commutation, Tj=125℃

(dv/dt)c

MIN

10

V/μs

STATIC CHARACTERISTICS

PARAMETER

TEST CONDITIONS SYMBOL

VALUE

UNITS

Peak On-State Voltage

IT=23A,tp=380μs

VTM

MAX

1.7

V

Threshold Voltage

Tj=125℃

VTO

MAX

0.87

V

Dynamic Resistance

Tj=125℃

Rd

MAX

36.6

mΩ

Repetitive Peak Off-State Curren

VD =VDRM

Tj=25℃

IDRM

MAX

10

μ

A

Tj=125℃

1

mA

Repetitive Peak Off-State Curren

VR=VRRM

Tj=25℃

IRRM

MAX

10

μ

A

Tj=125℃

1

mA

RATING AND CHARACTERISTICS CURVES

IT(AV) (A)

0

8

6

4

2

5

10

15

Ptot

(W)

0

4

2.8

2.2

1.9

a = 1.57

α

Tmb(max)

(°C)

125

105.5

108.8

115.3

121.8

118.5

112.0

conduction

angle

(degrees)

form

factor

a

30

60

90

120

180

4

2.8

2.2

1.9

1.57

α

Fig. 1. Total power dissipation as a function of average on-state current; maximum values