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BT151-600-R 数据表(PDF) 1 Page - Shenzhen Luguang Electronic Technology Co., Ltd |
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BT151-600-R 数据表(HTML) 1 Page - Shenzhen Luguang Electronic Technology Co., Ltd |
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1 / 5 page ![]() BT151-500R/-600R/-800R 12A Silicon Controlled Rectifiers http:// www.lgesemi.com Revision:20240716-P1 mail:lge@lgesemi.com Features: ◇ Single side grooving technology with independent Intellectualproperty rights,table glass passivation Technology; ◇ Multi-layer metallized electrode; ◇ High blocking voltage and high temperature stability. Applications It is widely used in the fields of lighting, temperature adjustment, speed regulation, electric tools,massager, solid -state relay,washing machine, vacuum cleaners, AC motor speed regulation and so on. Mechanical Data ◇ Moisture Sensitivity: MSL Level 1,per J-STD-020 ◇ Terminals:Matte Tin Finish. Solderable per MIL-STD-202 Method 208 ◇ Case Material:Molded Plastic; ◇ Molding compound meet UL Flammability ClassificationRating 94V-0 ◇ Case:JEDEC TO-220AB MAXIMUM RATING Ratings at 25℃ ambient tepmerature unless otherwise specified. PARAMETER SYMBOL VALUE UNITS R.M.S. On-State Current Tc=105℃ IT(RMS) 12 A On-State average current Tc=105℃ IT(AV) 7.5A A Non-Repetitive Surge Peak On-State Current(Full Cycle,Tj initial=25℃) F=50HZ T=10ms ITSM 120 A F=60HZ T=8.3ms 132 I2t Value for Fusing tp=10ms I2t 72 A2s Critical Rate of Rise of On-State Current F=120HZ Tj=125℃ di/dt 50 A/μs Repetitive peak Off-State voltage Tj=25℃ VDRM/VRRM 500/600/800 V Non repetitive surge peak off-state voltage tp=10ms Tj=25℃ VDSM/VRSM VDRM/VRRM+100 V Peak Gate Current tp=20μs Tj=125℃ IGM 5 A Peak Gate Current tp=20μs Tj=125℃ VGM 5.0 V Peak Gate Power Dissipation Tj=125℃ PGM 20 W Average Gate Power Dissipation Tj=125℃ PG(AV) 1.0 W Typical Thermal Resistance(Junction to Ambient) TO-220AB RΘJA 55 ℃ /W Typical Thermal Resistance(Junction to Case (AC)) TO-220AB RΘJC 1.1 ℃ /W Operating Junction temperature TJ -40~+125 ℃ Storage temperature range TSTG -40~+150 ℃ |
类似零件编号 - BT151-600-R |
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类似说明 - BT151-600-R |
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