Copyright 2024 RAMXEED LIMITED

Fujitsu Semiconductor Memory Solutions Limited has changed its name to RAMXEED Limited.

RAMXEED Limited will continue to offer and support existing products while maintaining Fujitsu's

part number unchanged.

Memory ReRAM

12M (1536 K  8) Bit SPI

MB85AS12MT



DESCRIPTION

MB85AS12MT is a ReRAM (Resistive Random Access Memory) chip in a configuration of 1,572,864

words  8 bits, using the resistance-variable memory process and silicon gate CMOS process technologies

for forming the nonvolatile memory cells.

MB85AS12MT adopts the Serial Peripheral Interface (SPI).

MB85AS12MT is able to retain data without using a back-up battery, as is needed for SRAM.

The memory cells used in the MB85AS12MT can be used for 5  105 rewrite operations.



FEATURES

• Bit configuration

: 12 Mbits (1,572,864 words  8 bits)

• Serial Peripheral Interface

: SPI (Serial Peripheral Interface)

Correspondent to SPI mode 0 (0, 0) and mode 3 (1, 1)

• Write buffer size

: 256 bytes

• Operating frequency

: 10 MHz (Max)

• Data endurance

: 5  105 times / 4bytes*

*4 bytes are selected by A1 to A0.

• Data retention

: 10 years (+85 C)

• Operating power supply voltage : 1.6 V to 3.6 V

• Operating power supply current : Write current 1.5 mA (Typ)

Read current 0.15 mA (Typ@5 MHz)

Standby current 65 A (Typ)

Sleep current 6 A (Typ)

• Operation ambient temperature range : -40 C to +85 C

• Package

: 11-pin WLP

RoHS compliant

DS501-00071-1v1-E