MB85AS12MT

20

DS501-00071-1v1-E



POWER ON/OFF SEQUENCE

If the device does not operate within the specified conditions of read cycle, write cycle or power on/off

sequence, memory data can not be guaranteed.



ReRAM CHARACTERISTICS

*: 4 bytes are selected by A1 to A0.

Parameter

Symbol

Value

Unit

Min

Max

CS level hold time at power OFF

tpd

10



ms

CS level hold time at power ON

tpu

1



ms

Power supply rising time

tr

50





s/V

Power supply falling time

tf

100





s/V

Parameter

Value

Unit

Remarks

Min

Max

Write Endurance 5  105



Times/4bytes*

Operation Ambient Temperature TA   85 C

Data Retention

10



Years

Operation Ambient Temperature TA   85 C

Data register size



256

byte

VSS

CS >VDD

× 0.7V

tpd

tpu

tr

tf

VIL (Max)

1.0 V

VIH (Min)

VDD (Min)

VDD

CS : don't care

CS >VDD

× 0.7V

CS

CS

VSS

VIL (Max)

1.0 V

VIH (Min)

VDD (Min)

VDD

* : CS (Max) < VDD  0.5 V