MB85AS8MT datasheet(16/30 Pages) RAMXEED

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MB85AS8MT

DS501-00060-2v2-E



ELECTRICAL CHARACTERISTICS

1. DC Characteristics

(within recommended operating conditions)

Parameter

Symbol

Condition

Value

Unit

Min

Typ

Max

Input leakage current

|ILI|

CS, SCK, SI



0 V to VDD





Output leakage current

|ILO|

SO  0 V to VDD





Operating power supply

current (Read)

IDDR (60)

SCK = 5 MHz,

TA=0 C to 60 C,

1.6V  VDD  2.0V



0.15

0.3

IDDR (85)

SCK = 10 MHz,

TA=  40 C to 85 C,

1.6V  VDD  3.6V



0.7

Operating power supply

current (Write)

IDDW (60)

SCK = tWC,

TA=0 C to 60 C,

1.6V  VDD  2.0V



1.5



IDDW (85)

SCK = tWC,

TA=  40 C to 85 C,

1.6V  VDD  3.6V



2.5

Standby current

ISB

SCK  SI  CS  VDD



500



Sleep current

IZZ

CS  VDD

All inputs VSS or VDD

VDD=3.6V, TA=85 C





CS  VDD

All inputs VSS or VDD

VDD=1.45V, TA=60 C





Input high voltage

VIH

VDD  1.6 V to 3.6 V

VDD  0.7



VDD  0.5

Input low voltage

VIL

VDD  1.6 V to 3.6 V



0.5



VDD  0.3

Output high voltage

VOH

IOH   1.5 mA @VDD  1.8 V

IOH   1.2 mA @VDD < 1.8 V V



0.8



Output low voltage

VOL

IOL  1.5 mA @VDD  1.8 V

IOL  1.2 mA @VDD < 1.8 V



VDD  0.2

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