Electrical specifications

STA333ML

8/23

DocID13177 Rev 8

3.4

Electrical specifications - digital section

3.5

Electrical specifications - power section

The specifications given here are with the operating conditions: VCC = 18 V, VDD = 3.3 V,

fsw = 384 kHz, Tamb = 25 °C, RL =8  unless otherwise specified

Table 6. Electrical specifications for digital section

Symbol

Parameter

Conditions

Min.

Typ.

Max.

Unit

Iil

Input current without bias

device

Vi = 0 V

-10

-

10

µA

Iih

Vi = VDD = 3.6 V

-10

-

10

µA

Vil

Low-level input voltage

-

-

-

0.2 *

VDD

V

Vih

High-level input voltage

-

0.8 *

VDD

--

V

Vol

Low-level output voltage

Iol = 2 mA

-

-

0.4 *

VDD

V

Voh

High-level output voltage

Ioh = 2 mA

0.8 *

VDD

--

V

Ipu

Pull-up/down current

-

-25

66

125

µA

Rpu

Equivalent pull-up/down

resistance

--

50

-

k



Table 7. Electrical specifications for power section

Symbol

Parameter

Conditions

Min.

Typ.

Max.

Unit

Po

Output power BTL

THD = 1%

-

16

-

W

THD = 10%

-

20

-

RdsON

On resistance of power

P-channel/N-channel

MOSFET (total bridge)

ld = 1 A

-

180

250

m



ldss

Power

P-channel/N-channel

leakage current

--

-

10

A

gP

Power P-channel

RdsON matching

ld = 1 A

95

-

-

%

gN

Power N-channel

RdsON matching

ld = 1 A

95

-

-

%

ILDT

Low current dead time

(static)

Resistive load Figure 4

-5

10

ns

IHDT

High current dead time

(dynamic)

Load = 1.5 A (Figure 5)

-

10

20

ns

tr

Rise time

Resistive load Figure 4

-8

10

ns