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L9613 数据表(PDF) 12 Page - STMicroelectronics |
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L9613 数据表(HTML) 12 Page - STMicroelectronics |
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12 / 15 page ![]() Functional description L9613 12/15 3.1 ESD application hints To improve the ESD robustness of this device above specified ±2 kV/HBM external blocking capacitors must be used. Nevertheless the max. energy which can be clamped by this device should not exceeds 0.2mJ for each pin. An equivalent input diagram for calculation can be seen in Figure 11. ESD discharge model: Figure 11. Input diagram for calculation E ESD 1 2 ---C HBMUESD 2 0.2mJ 1 2 ---C EXT 45V 2 + == 100pF 1.5k Ω 45V 45V E ≤ 0.2mJ HBM C R HBM C ext |
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