PSPICE MODEL

Figure A11 shows the PSpice model of one

DALC208SC6 cell. In this model, the diodes are

defined by the PSpice parameters given in table

below (Fig A12).

Note: This simulation model is available only for an ambient tem-

perature of 27°C.

The simulations done (Fig. A13, A14, A15) shows

that the PSpice model is close to the product

behavior.

DPOS

DNEG

BV

99

CJO

7p

7p

IBV

1u

1u

IKF

28.357E-3

1000

IS

118.78E-15

5.6524E-9

ISR

100E-12

472.3E-9

M

0.3333

0.3333

N

1.3334

2.413

NR

22

RS

0.68377

0.71677

VJ

0.6

0.6

Fig. A12: PSpice parameters.

Vref2

Vref1

I/O

Dpos

Dneg

0.3

Ω

0.5

Ω

0.8nH

1.45nH

0.8nH 0.3

Ω

Fig. A11: PSpice model of one DALC208SC6 cell.

0

50

100

0

10

20

30

40

50

60

t(ns)

Current (A) / Voltage (V)

Current

Surge

I/O

Voltage

Fig. A13a: PSpice model simulation: surge > 0

IEC 1000-4-2 contact discharge response.

0

50

100

-50

-40

-30

-20

-10

0

t(ns)

Current (A) / Voltage (V)

Current

Surge

I/O

Voltage

Fig. A13b: PSpice model simulation: surge < 0

IEC 1000-4-2 contact discharge response.

1

10

100

1,000

-30

-20

-10

0

f(MHz)

dBm

Measured

PSpice

Fig. A14: Attenuation comparison.

DALC208SC6

9/10