LP55231 datasheet(4/59 Pages) TI2

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LP55231

SNOSCR5D – MARCH 2013 – REVISED DECEMBER 2016

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(1)

Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings

only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended

Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

(2)

All voltage are with respect to the potential at the GND pin.

(3)

Internal thermal shutdown circuitry protects the device from permanent damage. Thermal shutdown engages at TJ = 150°C (typical) and

disengages at TJ = 130°C (typical).

(4)

For detailed soldering specifications and information, refer to AN-1187 Leadless Leadframe Package (LLP).

6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)

(1) (2)

MIN

MAX

UNIT

Voltage

Voltage on power pin VDD

−0.3

Voltage on D1 to D9, C1

−, C1+,

−, C2+, VOUT

−0.3 V to VDD + 0.3 V with 6 V maximum

Power

Continuous power dissipation(3)

Internally limited

Temperature

Junction temperature, TJ-MAX

125

°C

Maximum lead temperature (soldering)

See (4)

Storage temperature, Tstg

–65

150

°C

(1)

JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2)

JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.2 ESD Ratings

VALUE

UNIT

V(ESD)

Electrostatic discharge

Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1)

±2500

Charged-device model (CDM), per JEDEC specification JESD22-C101(2)

±1000

Machine model: all pins

±250

(1)

All voltage are with respect to the potential at the GND pin.

(2)

In applications where high power dissipation and/or poor package thermal resistance is present, the maximum ambient temperature may

have to be derated. Maximum ambient temperature (TA-MAX) is dependent on the maximum operating junction temperature (TJ-MAX-OP =

125°C), the maximum power dissipation of the device in the application (PD-MAX), and the junction-to ambient thermal resistance of the

part/package in the application (RθJA), as given by the following equation: TA-MAX = TJ-MAX-OP – (RθJA × PD-MAX).

6.3 Recommended Operating Conditions

Over operating free-air temperature range (unless otherwise noted)

(1)

MIN

NOM

MAX

UNIT

VDD

Input voltage

2.7

5.5

Voltage on logic pins (input or output pins)

VDD

IOUT

Recommended charge pump load current

100

Junction temperature

−30

125

°C

Ambient temperature(2)

−30

°C

(1)

For more information about traditional and new thermal metrics, see Semiconductor and IC Package Thermal Metrics.

6.4 Thermal Information

THERMAL METRIC(1)

LP55231

UNIT

RTW (WQFN)

24 PINS

RθJA

Junction-to-ambient thermal resistance

33.3

°C/W

RθJC(top)

Junction-to-case (top) thermal resistance

27.3

°C/W

RθJB

Junction-to-board thermal resistance

11.4

°C/W

ψJT

Junction-to-top characterization parameter

0.2

°C/W

ψJB

Junction-to-board characterization parameter

11.4

°C/W

RθJC(bot)

Junction-to-case (bottom) thermal resistance

2.2

°C/W

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