IS66/67WVR4M8ALL/BLL

Integrated Silicon Solution, Inc.- www.issi.com

26

Rev. A2

07/08/2024

7.3 DC CHARACTERISTICS

Symbol

Parameter

Min.

Typ.

Max.

Units Test Conditions

Vcc

3V

2.7

3.0

3.6

V

1.8V

1.65

1.8

1.95

ICC

Average Operating

Current (85°C)

SPI@33MHz

-

-

8

mA

CE# < Vcc - 0.2V,

Others at 0.2V or Vcc - 0.2V, II/O = 0mA, f=max

QPI@104MHz

-

-

15

Average Operating

Current (105°C)

SPI@33MHz

-

-

8

QPI@104MHz

-

-

15

ISB1

VCC Standby

Current CMOS

(85°C)

3V

-

150

200

uA

CE# = VCC,

VIN = GND or VCC

1.8V

-

200

VCC Standby

Current CMOS

(105°C)

3V

-

250

1.8V

-

250

ISB2

Deep Power

Down Current

(85°C)

3V

-

-

30

uA

CE#, VCC = 3.6V

1.8V

-

-

20

Deep Power

Down Current

(105°C)

3V

-

-

50

CE#, VCC = 1.9V

1.8V

-

-

30

VIL(1)

Input Low Voltage

3V

-0.5

-

0.3VCC

V

1.8V

-0.2

-

0.4

VIH(1)

Input High Voltage

3V

0.7VCC

-

VCC + 0.3

V

1.8V

VCC

– 0.4

-

VCC + 0.2

VOL

Output Low Voltage

-

-

0.2VCC

V

IOL = 200 µA

VOH

Output High Voltage

0.8VCC

-

-

V

IOH = -200 µA

ILI

Input Leakage Current

-

-

-

±1

VIN = 0V to VCC

ILO

Output Leakage Current

-

-

-

±1

VIN = 0V to VCC

Note:

1. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at VCC

= VCC (Typ), TA=25°C.