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IS66WVR4M8BLL-R104TLI 数据表(PDF) 3 Page - Integrated Silicon Solution, Inc |
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IS66WVR4M8BLL-R104TLI 数据表(HTML) 3 Page - Integrated Silicon Solution, Inc |
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3 / 34 page ![]() IS66/67WVR4M8ALL/BLL Integrated Silicon Solution, Inc.- www.issi.com 3 Rev. A2 07/08/2024 GENERAL DESCRIPTION The IS66/67WVR4M8ALL/BLL are integrated memory device containing 32Mb Pseudo Static Random Access Memory using a self-refresh DRAM array organized as 4M words by 8 bits. The device supports SPI (Serial Peripheral Interface) & QPI (Quad Peripheral Interface) protocols, Very Low Signal Count (6 signal pins; CLK, CE#, and 4 SIOs), Hidden Refresh Operation, and Industrial temperature and Automotive A2 grade temperature . In Read/Write operation, the address advances to next address automatically until CE# goes to HIGH, and wraps to 1st address after the last address. In-Band Reset is supported instead of dedicated RESET# pin, and minimum transferred data size is 8bit. PERFORMANCE SUMMARY Read / Write Operation Maximum Clock Rate 104MHz Maximum Clock to Access Time at 104MHz 7ns Maximum Current Consumption Burst Read or Write ( SPI mode, 33MHz) 8mA Burst Read or Write ( QPI mode, 104MHz) 15mA Standby (ISB1, 85°C ) 3V 200 uA 1.8V 200 uA |
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