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M41ST85W 数据表(PDF) 18 Page - STMicroelectronics

部件名 M41ST85W
功能描述  3.0/3.3 V I²C combination serial RTC, NVRAM supervisor and microprocessor supervisor
PDF  43 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

M41ST85W 数据表(HTML) 18 Page - STMicroelectronics

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Operating modes
M41ST85W
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DocID7531 Rev 12
included. If the SRAM includes a second chip enable pin (E2), this pin should be tied to
VOUT.
If data retention lifetime is a critical parameter for the system, it is important to review the
data retention current specifications for the particular SRAMs being evaluated. Most SRAMs
specify a data retention current at 3.0 volts. Manufacturers generally specify a typical
condition for room temperature along with a worst case condition (generally at elevated
temperatures). The system level requirements will determine the choice of which value to
use. The data retention current value of the SRAMs can then be added to the IBAT value of
the M41ST85W to determine the total current requirements for data retention. The available
battery capacity for the SNAPHAT® top of your choice can then be divided by this current to
determine the amount of data retention available (see Table on page 40).
For a further more detailed review of lifetime calculations, please see application note
AN1012.



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