1

Characteristics

Table 1. Absolute ratings (limiting values at 25 °C, unless otherwise specified)

Symbol Parameter

Value

Unit

VRRM

Repetitive peak reverse voltage

60

V

IF(AV)

Average forward current, δ = 0.5, square wave

SMA

TL = 130 °C

1

A

SMA Flat Notch, SMB TL = 135 °C

IFSM

Surge non repetitive forward current

SMA, SMB

tp = 10 ms sinusoidal

75

A

SMA Flat Notch

100

PARM

Repetitive peak avalanche power

tp = 10 µs, Tj = 125 °C

180

W

Tstg

Storage temperature range

-65 to +150

°C

Tj

Maximum operating junction temperature(1)

+150

°C

1. (dPtot/dTj) < (1/Rth(j-a)) condition to avoid thermal runaway for a diode on its own heatsink.

Table 2. Thermal resistance parameter

Symbol

Parameter

Max. value

Unit

Rth(j-l)

Junction to lead

SMA

30

°C/W

SMA Flat Notch

20

SMB

23

For more information, please refer to the following application note :

•

AN5088 : Rectifiers thermal management, handling and mounting recommendations

Table 3. Static electrical characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

IR(1)

Reverse leakage current

Tj = 25 °C

VR = VRRM

-

4

µA

Tj = 125 °C

-

1.1

4

mA

VF(2)

Forward voltage drop

Tj = 25 °C

IF = 1 A

-

0.67

V

Tj = 125 °C

-

0.49

0.57

Tj = 25 °C

IF = 2 A

-

0.8

Tj = 125 °C

-

0.58

0.65

1. Pulse test: tp = 5 ms, δ < 2%

2. Pulse test: tp = 380 µs, δ < 2%

To evaluate the conduction losses, use the following equation:

P = 0.49 x IF(AV) + 0.08 x IF2(RMS)

For more information, please refer to the following application notes related to the power losses :

•

AN604: Calculation of conduction losses in a power rectifier

•

AN4021: Calculation of reverse losses on a power diode

STPS160

Characteristics

DS0962 - Rev 10

page 2/13