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STPS160 数据表(PDF) 3 Page - STMicroelectronics |
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STPS160 数据表(HTML) 3 Page - STMicroelectronics |
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3 / 13 page ![]() 1.1 Characteristics (curves) Figure 1. Average forward power dissipation versus average forward current 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 P (W) F(AV) T δ =tp/T tp δ= 1 δ= 0.5 δ= 0.2 δ= 0.1 δ= 0.05 I (A) F(AV) Figure 2. Average forward current versus ambient temperature (δ = 0.5) 0 25 5 0 75 100 125 150 0.0 0.2 0.4 0.6 0.8 1.0 1.2 I (A) F(AV) T δ=tp/T tp SM B R = 80 °C/ W S =1.5cm th(j-a) (CU) 2 T (°C) amb SMB R R th(j-a) t h(j-I) SM A R =100°C/W S =1.5cm th(j-a) (CU) 2 Figure 3. Normalized avalanche power derating versus pulse duration (Tj = 125 °C) P (tp) P (10 µs) ARM ARM 0.001 0.01 0.1 1 1 10 100 1000 t (µs) p Figure 4. Relative variation of thermal impedance junction to ambient versus pulse duration (SMB) 1E-2 1E-1 1E+0 1E+1 1E+2 1E+3 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 Z /R th(j-a) th(j-a) t (s) p Single pulse Figure 5. Relative variation of thermal impedance junction to ambient versus pulse duration (SMA) 1E-2 1E-1 1E+0 1E+1 1E+2 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 Z /R th(j-a) th(j-a) t (s) p Single pulse Figure 6. Reverse leakage current versus reverse voltage applied (typical values) 0 5 10 15 20 25 30 35 40 45 50 55 60 1E-1 1E+0 1E+1 1E+2 1E+3 I (µA) R V (V) R T =100°C j T =75°C j T =25°C j STPS160 Characteristics (curves) DS0962 - Rev 10 page 3/13 |
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