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L99DZ80EP 数据表(PDF) 21 Page - STMicroelectronics

部件名 L99DZ80EP
功能描述  Automotive door actuator driver
PDF  68 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

L99DZ80EP 数据表(HTML) 21 Page - STMicroelectronics

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L99DZ80EP
Electrical specifications
67
2.7
H-bridge driver
|IOLDECV|
Undercurrent threshold to GND
VS =13.5V;
VCC =5 V;
sink
10
20
30
mA
tFOL
Filter time of open-load signal
Duration of open-
load condition to set
the status bit
0.5
2.0
3.0
ms
Table 14. Current monitoring (continued)
Symbol
Parameter
Test condition
Min.
Typ.
Max.
Unit
Table 15. Gate drivers for the external Power-MOS (H-bridge)
Symbol
Parameter
Test condition
Min.
Typ.
Max.
Unit
Drivers for external high-side Power-MOS
IGHx(Ch)
Average charge current
(charge stage)
Tj =25°C
0.3
A
RGHx
On-resistance (discharge-
stage)
VSHx =0V; IGHx =50mA;
Tj =25°C
46
8
VSHx =0V; IGHx =50mA;
Tj =125 °C
810
VGHxH
Gate-on voltage
Outputs floating
VSHx +
8
VSHx +
10
VSHx +
11.5
V
RGSHx
Passive gate-clamp
resistance
VGHx =0.5 V
15
k
Drivers for external low-side Power-MOS
IGLx(Ch)
Average charge-current
(charge stage)
Tj =25°C
0.3
A
RGLx
On-resistance (discharge-
stage)
VSLx =0V; IGHx =50mA;
Tj =25°C
46
8
VSLx =0V; IGHx =50mA;
Tj =125 °C
810
VGHLx
Gate-on voltage
Outputs floating
VSLx +
8
VSLx +
10
VSLx +
11.5
V
RGSLx
Passive gate-clamp
resistance
15
k
Table 16. Gate drivers for the external Power-MOS switching times
Symbol
Parameter
Test condition
Min. Typ. Max.
Unit
TG(HL)xHL
Propagation delay time high to
low (switch mode)(1)
VS = 13.5 V; VSHx =0;
RG =0 ; CG =2.7 nF
1.5
µs
TG(HL)xLH
Propagation delay time low to
high (switch mode)(1)
VS = 13.5 V; VSLx =0;
RG =0 ; CG =2.7 nF
1.5
µs



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