1

Characteristics

Table 1. Absolute ratings (limiting values per diode at 25 °C, unless otherwise specified)

Symbol

Parameter

Value

Unit

VRRM

Repetitive peak reverse voltage

120

V

IF(RMS)

Forward rms current

30

A

IF(AV)

Average forward current, δ = 0.5, square wave

Tc = 160 °C

Per diode

5

A

Tc = 155 °C

Per device

10

IFSM

Surge non repetitive forward current

tp = 10 ms sinusoidal

120

A

PARM

Repetitive peak avalanche power

tp = 10 µs, Tj = 125 °C

215

W

Tstg

Storage temperature range

-65 to +175

°C

Tj

Maximum operating junction temperature (1)

+175

°C

1. (dPtot/dTj) < (1/Rth(j-a)) condition to avoid thermal runaway for a diode on its own heatsink.

Table 2. Thermal resistance parameters

Symbol

Parameter

Max. value

Unit

Rth(j-c)

Junction to case

Per diode

3.8

°C/W

Total

2.3

Rth(c)

Coupling

0.7

°C/W

When the diodes 1 and 2 are used simultaneously: ΔTj (diode1) = P(diode1) x Rth(j-c) (per diode) + P(diode2) x Rth(c)

For more information, please refer to the following application note :

•

AN5088 : Rectifiers thermal management, handling and mounting recommendations

Table 3. Static electrical characteristics (per diode)

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

IR (1)

Reverse leakage current

Tj = 25 °C

VR = VRRM

-

6

µA

Tj = 125 °C

-

1

3

mA

VF (2)

Forward voltage drop

Tj = 25 °C

IF = 5 A

-

0.85

V

Tj = 125 °C

-

0.64

0.70

Tj = 25 °C

IF = 10 A

-

0.96

Tj = 125 °C

-

0.73

0.80

1. Pulse test: tp = 5 ms, δ < 2%

2. Pulse test: tp =380 µs, δ < 2%

To evaluate the conduction losses, use the following equation: P = 0.60 x IF(AV) + 0.02 x IF 2 (RMS)

For more information, please refer to the following application notes related to the power losses :

•

AN604: Calculation of conduction losses in a power rectifier

•

AN4021: Calculation of reverse losses on a power diode

STPS10120C

Characteristics

DS13723 - Rev 2

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