Figure 5. Reverse leakage current versus reverse voltage

applied (typical values, per diode)

I (µA)

R

1.E-02

1.E-01

1.E+00

1.E+01

1.E+02

1.E+03

0

10

20

30

40

50

60

70

80

90

100 110 120

V (V)

R

T =125°C

j

T =25°C

j

T =50°C

j

T =75°C

j

T =100°C

j

Figure 6. Junction capacitance versus reverse voltage

applied (typical values, per diode)

C(pF)

10

100

1000

1

1 0

100

1000

V (V)

R

F=1MHz

V

=30mV

T =25°C

OSC

RMS

j

Figure 7. Forward voltage drop versus forward current (per diode)

I (A)

F

0

20

40

60

80

100

120

140

160

180

200

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

2.4 2.6

V (V)

F

T =25°C

(maximum values)

j

T =125°C

(maximum values)

j

T =125°C

(typical values)

j

STPS10120C

Characteristics (curves)

DS13723 - Rev 2

page 4/9