1.1

Characteristics (curves)

Figure 1. Average forward power dissipation versus

average forward current (per diode)

P

(W)

F(AV)

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

5.5

6.0

T

δ=tp/T

tp

I

(A)

F(AV)

δ = 1

δ = 0.1

δ = 0.05

δ = 0.5

δ = 0.2

Figure 2. Average forward current versus ambient

temperature (δ = 0.5, per diode)

I

(A)

F(AV)

0

1

2

3

4

5

6

0

25

50

7 5

100

125

150

175

T

δ=tp/T

tp

T

(°C)

amb

R

=30° C/W

th(j-a)

R

=R

th(j-a)

th(j-c)

TO-220AB

Figure 3. Normalized avalanche power derating versus

pulse duration (Tj = 125 °C)

P

(tp)

P

(10 µs)

ARM

ARM

0.001

0.01

0.1

1

1

10

100

1000

t (µs)

p

Figure 4. Relative variation of thermal impedance junction

to case versus pulse duration

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.E-03

1.E-02

1.E-01

1.E+00

t (s)

p

Single pulse

Zth(j-c) /Rth(j-c)

STPS10120C

Characteristics (curves)

DS13723 - Rev 2

page 3/9