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TLV2170IDR 数据表(PDF) 17 Page - Texas Instruments

部件名 TLV2170IDR
功能描述  TLVx170 36-V, Single-Supply, EMI-Hardened, Low-Power Operational Amplifiers for Cost-Sensitive Systems
PDF  47 Pages
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制造商  TI2 [Texas Instruments]
网页  https://www.ti.com
标志 TI2 - Texas Instruments

TLV2170IDR 数据表(HTML) 17 Page - Texas Instruments

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Time (100 s/div)
m
18 V
-18 V
37-V
PP
Sine Wave
( 18.5 V)
±
17
TLV170, TLV2170, TLV4170
www.ti.com
SBOS782A – NOVEMBER 2016 – REVISED MAY 2018
Product Folder Links: TLV170 TLV2170 TLV4170
Submit Documentation Feedback
Copyright © 2016–2018, Texas Instruments Incorporated
7.3 Feature Description
7.3.1 Operating Characteristics
The TLVx170 family of amplifiers is specified for operation from 2.7 V to 36 V (±1.35 V to ±18 V). Many of the
specifications apply from –40°C to +125°C. Parameters that can exhibit significant variance with regard to
operating voltage or temperature are presented in the Typical Characteristics: Table of Graphs section.
7.3.2 Phase-Reversal Protection
The TLVx170 family has an internal phase-reversal protection. Many op amps exhibit a phase reversal when the
input is driven beyond the linear common-mode range. This condition is most often encountered in noninverting
circuits when the input is driven beyond the specified common-mode voltage range, causing the output to
reverse into the opposite rail. The input of the TLVx170 prevents phase reversal with excessive common-mode
voltage. Instead, the output limits into the appropriate rail. This performance is shown in Figure 26.
Figure 26. No Phase Reversal
7.3.3 Electrical Overstress
Designers often ask questions about the capability of an op amp to withstand electrical overstress. These
questions tend to focus on the device inputs, but can involve the supply voltage pins or even the output pin. Each
of these different pin functions have electrical stress limits determined by the voltage breakdown characteristics
of the particular semiconductor fabrication process and specific circuits connected to the pin. Additionally, internal
electrostatic discharge (ESD) protection is built into these circuits for protection from accidental ESD events both
before and during product assembly.
A good understanding of this basic ESD circuitry and the relevance to an electrical overstress event is helpful.
Figure 27 illustrates the ESD circuits contained in the TLVx170 (indicated by the dashed line area). The ESD
protection circuitry involves several current-steering diodes connected from the input and output pins and routed
back to the internal power-supply lines, where the diodes meet at an absorption device internal to the op amp.
This protection circuitry is intended to remain inactive during normal circuit operation.



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