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TLV2170IDR 数据表(PDF) 8 Page - Texas Instruments

部件名 TLV2170IDR
功能描述  TLVx170 36-V, Single-Supply, EMI-Hardened, Low-Power Operational Amplifiers for Cost-Sensitive Systems
PDF  47 Pages
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制造商  TI2 [Texas Instruments]
网页  https://www.ti.com
标志 TI2 - Texas Instruments

TLV2170IDR 数据表(HTML) 8 Page - Texas Instruments

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TLV170, TLV2170, TLV4170
SBOS782A – NOVEMBER 2016 – REVISED MAY 2018
www.ti.com
Product Folder Links: TLV170 TLV2170 TLV4170
Submit Documentation Feedback
Copyright © 2016–2018, Texas Instruments Incorporated
(1)
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report.
6.4 Thermal Information: TLV170
THERMAL METRIC(1)
TLV170
UNIT
D (SOIC)
DBV (SOT-23)
8 PINS
5 PINS
RθJA
Junction-to-ambient thermal resistance
149.5
245.8
°C/W
RθJC(top)
Junction-to-case (top) thermal resistance
97.9
133.9
°C/W
RθJB
Junction-to-board thermal resistance
87.7
83.6
°C/W
ψJT
Junction-to-top characterization parameter
35.5
18.2
°C/W
ψJB
Junction-to-board characterization parameter
89.5
83.1
°C/W
RθJC(bot)
Junction-to-case (bottom) thermal resistance
°C/W
(1)
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report.
6.5 Thermal Information: TLV2170
THERMAL METRIC(1)
TLV2170
UNIT
D (SOIC)
DGK (VSSOP)
8 PINS
8 PINS
RθJA
Junction-to-ambient thermal resistance
134.3
180
°C/W
RθJC(top)
Junction-to-case (top) thermal resistance
72.1
55
°C/W
RθJB
Junction-to-board thermal resistance
60.6
130
°C/W
ψJT
Junction-to-top characterization parameter
18.2
5.3
°C/W
ψJB
Junction-to-board characterization parameter
53.8
120
°C/W
RθJC(bot)
Junction-to-case (bottom) thermal resistance
°C/W
(1)
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report.
6.6 Thermal Information: TLV4170
THERMAL METRIC(1)
TLV4170
UNIT
D (SOIC)
PW (TSSOP)
14 PINS
14 PINS
RθJA
Junction-to-ambient thermal resistance
93.2
106.9
°C/W
RθJC(top)
Junction-to-case (top) thermal resistance
51.8
24.4
°C/W
RθJB
Junction-to-board thermal resistance
49.4
59.3
°C/W
ψJT
Junction-to-top characterization parameter
13.5
0.6
°C/W
ψJB
Junction-to-board characterization parameter
42.2
54.3
°C/W
RθJC(bot)
Junction-to-case (bottom) thermal resistance
°C/W



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