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BAT30F4 数据表(PDF) 4 Page - STMicroelectronics |
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BAT30F4 数据表(HTML) 4 Page - STMicroelectronics |
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4 / 11 page ![]() 1.1 Characteristics (curves) Figure 1. Reverse leakage current versus reverse applied voltage (typical values) 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03 0 5 10 15 20 25 30 IR(µA) VR(V) Tj = 85°C Tj = 25°C Figure 2. Forward voltage drop versus forward current (typical values) 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 0.00 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 0.45 0.50 0.55 IF(A) Tj = 85°C Tj = 25°C VF(V) Figure 3. Relative variation of reverse leakage current versus junction temperature 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 -40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 IR[Tj] / IR[Tj = 25 °C] Tj(°C) VR = VRRM Figure 4. Junction capacitance versus reverse applied voltage (typical values) 1 10 1 10 100 F = 1 MHz VOSC = 30 mV RMS Tj = 25°C VR(V) C(pF) Figure 5. Continuous forward current versus ambient temperature 0 50 100 150 200 250 300 350 0 25 50 75 100 125 150 Tamb(°C) IF(mA) BAT30F4 Characteristics (curves) DS10126 - Rev 8 page 4/11 |
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