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STD12NF06LT4... 数据表(PDF) 5 Page - STMicroelectronics |
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STD12NF06LT4... 数据表(HTML) 5 Page - STMicroelectronics |
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5 / 16 page ![]() DocID026610 Rev 2 5/16 STD12NF06LT4 Electrical characteristics 16 Table 7. Source-drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit ISD Source-drain current 12 A ISDM (1) 1. Pulse width limited by safe operating area Source-drain current (pulsed) 48 A VSD (2) 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5% Forward on voltage ISD = 12 A, VGS = 0 1.5 V trr Reverse recovery time ISD = 12 A, di/dt = 100 A/µs, VDD = 16 V, TJ = 150 °C see Figure 15 50 ns Qrr Reverse recovery charge 65 nC IRRM Reverse recovery current 2.5 A |
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