STD12NF06LT4... datasheet(3/16 Pages) STMICROELECTRONICS

部件名	STD12NF06LT4...

功能描述	Automotive-grade N-channel 60 V, 0.07 Ω typ., 12 A, StripFET™ II Power MOSFET in a DPAK package

PDF	16 Pages

Scroll/Zoom	100%

制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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3 / 16 page

DocID026610 Rev 2

3/16

STD12NF06LT4

Electrical ratings

Table 2. Absolute maximum ratings

Symbol

Parameter

Value

Unit

VDS

Drain-source voltage

VGS

Gate-source voltage

± 16

Drain current (continuous) at TC = 25 °C

Drain current (continuous) at TC= 100 °C

8.5

IDM

(1)

Pulse width limited by safe operating area

Drain current (pulsed)

PTOT

Total dissipation at TC = 25 °C

Derating factor

0.2

W/°C

dv/dt(2)

ISD ≤ 12 A, di/dt ≤ 200 A/µs, VDS ≤ 40 V, TJ ≤ TJMAX

Peak diode recovery voltage slope

V/ns

EAS

(3)

Starting TJ = 25 °C, ID = 6 A, VDD = 30 V

Single pulse avalanche energy

100

Tstg

Storage temperature

-55 to 175

°C

Max. operating junction temperature

Table 3. Thermal data

Symbol

Parameter

Value

Unit

Rthj-case Thermal resistance junction-case max.

°C/W

Rthj-pcb

(1)

When mounted on FR-4 board of 1 inch², 2 oz Cu.

Thermal resistance junction-pcb max.

°C/W

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