STD12NF06LT4... datasheet(4/16 Pages) STMICROELECTRONICS

部件名	STD12NF06LT4...

功能描述	Automotive-grade N-channel 60 V, 0.07 Ω typ., 12 A, StripFET™ II Power MOSFET in a DPAK package

PDF	16 Pages

Scroll/Zoom	100%

制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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4 / 16 page

Electrical characteristics

STD12NF06LT4

4/16

DocID026610 Rev 2

Electrical characteristics

(TCASE = 25 °C unless otherwise specified)

Table 4. On/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown

voltage

VGS = 0, ID = 250 µA,

IDSS

Zero gate voltage drain

current

VGS = 0, VDS = 60

µA

VGS = 0, VDS = 60

TC = 125 °C

µA

IGSS

Gate body leakage current

VDS = 0

VGS = ± 16 V

±100

VGS(th)

Gate threshold voltage

VDS = VGS, ID = 250 µA

RDS(on)

Static drain-source on-

resistance

VGS = 10 V, ID = 6 A

0.07

0.09

Ω

VGS = 5 V, ID = 6 A

0.08

0.1

Ω

Table 5. Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Input capacitance

VDS = 25 V, f = 1 MHz,

VGS = 0

350

Coss

Output capacitance

Crss

Reverse transfer

capacitance

Total gate charge

VDD = 48 V, ID = 12 A

VGS = 5 V

see Figure 14

7.510nC

Qgs

Gate-source charge

2.5

Qgd

Gate-drain charge

3.0

Table 6. Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on delay time

VDD = 30 V, ID = 6 A,

RG = 4.7 Ω, VGS = 4.5 V

see Figure 13

Rise time

td(off)

Turn-off delay time

Fall time

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