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FPD2000AS 数据表(PDF) 3 Page - Filtronic Compound Semiconductors

部件名 FPD2000AS
功能描述  2W PACKAGED POWER PHEMT
PDF  10 Pages
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制造商  FILTRONIC [Filtronic Compound Semiconductors]
网页  http://www.filtronic.co.uk/
标志 FILTRONIC - Filtronic Compound Semiconductors

FPD2000AS 数据表(HTML) 3 Page - Filtronic Compound Semiconductors

  FPD2000AS Datasheet HTML 1Page - Filtronic Compound Semiconductors FPD2000AS Datasheet HTML 2Page - Filtronic Compound Semiconductors FPD2000AS Datasheet HTML 3Page - Filtronic Compound Semiconductors FPD2000AS Datasheet HTML 4Page - Filtronic Compound Semiconductors FPD2000AS Datasheet HTML 5Page - Filtronic Compound Semiconductors FPD2000AS Datasheet HTML 6Page - Filtronic Compound Semiconductors FPD2000AS Datasheet HTML 7Page - Filtronic Compound Semiconductors FPD2000AS Datasheet HTML 8Page - Filtronic Compound Semiconductors FPD2000AS Datasheet HTML 9Page - Filtronic Compound Semiconductors Next Button
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Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Tel: +44 (0) 1325 301111
Fax: +44 (0) 1325 306177
Email: sales@filcs.com
Website: www.filtronic.com
3
Datasheet v3.0
FPD2000AS
TYPICAL MEASURED RF PERFORMANCE:
Note: Measurement Conditions TAMBIENT = 22°C unless otherwise stated (VDS=10V, IDS=350mA, f=1800MHz)
Power Transfer Characteristic
18.00
20.00
22.00
24.00
26.00
28.00
30.00
32.00
34.00
4.00
6.00
8.00
10.00
12.00
14.00
16.00
18.00
20.00
22.00
Input Power (dBm)
-.50
.00
.50
1.00
1.50
2.00
2.50
3.00
3.50
Pout
Comp Point
Drain Efficiency and PAE
.00%
10.00%
20.00%
30.00%
40.00%
50.00%
60.00%
70.00%
6.00
8.00
10.00
12.00
14.00
16.00
18.00
20.00
22.00
24.00
Input Power (dBm)
.00%
10.00%
20.00%
30.00%
40.00%
50.00%
60.00%
70.00%
PAE
Eff.
IMProductsvs.InputPower
17.00
19.00
21.00
23.00
25.00
27.00
3.00
5.00
7.00
9.00
11.00
13.00
InputPower(dBm)
-60.00
-55.00
-50.00
-45.00
-40.00
-35.00
-30.00
-25.00
-20.00
Pout
Im3,dBc
FPD2000AS I-V Curves
.000
.200
.400
.600
.800
1.000
1.200
1.400
0.00
1.00
2.00
3.00
4.00
5.00
6.00
7.00
8.00
Drain-Source Voltage (V)
VGS = 0V
VGS = -0.25V
VGS = -0.50V
VGS = -0.75V
VGS = -1.0V
VGS = -1.25V
10.0
5.0
3.
0
4.0
-0.2
-0
.4
FPD2000AS IP3 CONTOURS 2 GHz
Swp Max
244
Swp Min
1
IP3_dBm = 52 dBm
IP3_dBm = 50 dBm
IP3_dBm = 48 dBm
IP3_dBm = 46 dBm
IP3_dBm = 44 dBm
IP3_dBm = 42 dBm
IP3_dBm = 40 dBm
10.0
5.0
3.
0
4.0
-0.
2
-0
.4
FPD2000AS POWER CONTOURS 2 GHz
Swp Max
181
Swp Min
1
Pout_dBm = 34 dBm
Pout_dBm = 32 dBm
Pout_dBm = 30 dBm
Pout_dBm = 28 dBm
Pout_dBm = 26 dBm
Pout_dBm = 24 dBm
Pout_dBm = 22 dBm
NOTE: Power contours measured at
constant input power, level set to meet
nominal P1dB rating at optimum match
point. Optimum match:
Γ
S = 3 – j6 Ω and ΓL = 11 – j3 Ω
NOTE: IP3 contours generated with PIN =
11dB back-off from P1dB. Local maxima for best
linearity located at:
Γ
L = 15 + j4.5 Ω and ΓL = 28 – j25 Ω
with
Γ
S = 9.5 - j4 Ω



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