FPD2000AS datasheet(1/10 Pages) FILTRONIC

部件名	FPD2000AS

功能描述	2W PACKAGED POWER PHEMT

PDF	10 Pages

Scroll/Zoom	100%

制造商	FILTRONIC [Filtronic Compound Semiconductors]

网页	http://www.filtronic.co.uk/

标志

1 / 10 page

2W PACKAGED POWER PHEMT

Specifications subject to change without notice

Filtronic Compound Semiconductors Ltd

Tel: +44 (0) 1325 301111

Fax: +44 (0) 1325 306177

Email: sales@filcs.com

Website: www.filtronic.com

1

Datasheet v3.0

FPD2000AS

FEATURES:

•

33 dBm Output Power (P1dB) @1.8GHz

•

14 dB Power Gain (G1dB) @1.8GHz

•

46 dBm Output IP3

•

10V Operation

•

50% Power-Added Efficiency

•

Evaluation Boards Available

•

Usable Gain to 4GHz

GENERAL DESCRIPTION:

The FPD2000AS is a packaged depletion

mode AlGaAs/InGaAs pseudomorphic High

Electron

Mobility

Transistor

(pHEMT),

optimized for power applications in L-Band.

The

surface-mount

package

has

been

optimized for low parasitics.

PACKAGE:

TYPICAL APPLICATIONS:

•

Drivers or output stages in PCS/Cellular

base station transmitter amplifiers

•

Power applications in WLL/WLAN and

WiMax (3.5GHz) amplifiers

ELECTRICAL SPECIFICATIONS:

PARAMETER

SYMBOL

CONDITIONS

MIN

TYP

MAX

UNITS

Power at 1dB Gain Compression

P1dB

VDS = 10V; IDS = 350 mA

ΓS and ΓL tuned for Optimum IP3

32

33

dBm

Power Gain at dB Gain Compression

G1dB

VDS = 10V; IDS = 350 mA

ΓS and ΓL tuned for Optimum IP3

12.5

14.0

Maximum Stable Gain

S21/S12

MSG

VDS = 10 V; IDS = 350 mA

PIN = 0dBm, 50

Ω system

20

dB

Power-Added Efficiency

at 1dB Gain Compression

PAE

VDS = 10V; IDS = 350 mA

ΓS and ΓL tuned for Optimum IP3

45

%

3rd-Order Intermodulation Distortion

IM3

VDS = 10V; IDS = 350 mA

ΓS and ΓL tuned for Optimum IP3

POUT = 22 dBm

-47

dBc

Saturated Drain-Source Current

IDSS

VDS = 1.3 V; VGS = 0 V

1150

mA

Maximum Drain-Source Current

IMAX

VDS = 1.3 V; VGS

≅ +1 V

1800

mA

Transconductance

GM

VDS = 1.3 V; VGS = 0 V

1200

mS

Gate-Source Leakage Current

IGSO

VGS = -3 V

35

85

µA

Pinch-Off Voltage

|VP|

VDS = 1.3 V; IDS = 4 mA

0.7

0.9

1.4

V

Gate-Source Breakdown Voltage

|VBDGS|

IGS = 4 mA

6

V

Gate-Drain Breakdown Voltage

|VBDGD|

IGD = 4 mA

20

V

Thermal Resistance (channel-to-case)

ΘCC

See Note on following page

20

°C/W

Note: TAMBIENT = 22°; RF specification measured at f = 1850 MHz using CW signal (except as noted)

类似零件编号 - FPD2000AS

制造商	部件名	数据表	功能描述
Filtronic Compound Semi...	FPD2000AS	281Kb / 7P	2W PACKAGED POWER PHEMT

More results

类似说明 - FPD2000AS

制造商	部件名	数据表	功能描述
Filtronic Compound Semi...	LP3000P100	47Kb / 3P	PACKAGED 2W POWER PHEMT
	LP6836SOT343	67Kb / 2P	PACKAGED MEDIUM POWER PHEMT
	LPV3000	49Kb / 2P	2W Power PHEMT
List of Unclassifed Man...	TC3967	25Kb / 1P	2W Packaged Self-Bias PHEMT GaAs Power FETs
Filtronic Compound Semi...	FPD2000AS	281Kb / 7P	2W PACKAGED POWER PHEMT
	FPD2000V	510Kb / 3P	2W POWER PHEMT
	FPD3000	183Kb / 2P	2W POWER PHEMT
	FPD3000P100	182Kb / 3P	2W PACKAGED POWER PHEMT
	FPD3000	168Kb / 3P	2W POWER PHEMT
RF Micro Devices	FPD3000	243Kb / 4P	2W POWER pHEMT