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L4990AD 数据表(PDF) 12 Page - STMicroelectronics |
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L4990AD 数据表(HTML) 12 Page - STMicroelectronics |
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12 / 24 page ![]() ”Hiccup” keeps the system in control in case of short circuits but does not eliminate power com- ponents overstress during pulse-by-pulse limita- tion (from A to C). Other external protection cir- cuits are needed if a better control of overloads is required. Pin 8. VCC (Controller Supply). This pin supplies the signal part of the IC. The device is enabled as VCC voltage exceeds the start threshold and works as long as the voltage is above the UVLO threshold. Otherwise the device is shut down and the current consumption is extremely low. An internal Zener limits the voltage on VCC to 25V. Below this value the IC current consumption is low but increases considerably if this limit is ex- ceeded. A small film capacitor between this pin and SGND (pin 12), placed as close as possible to the IC, is recommended to filter high frequency noise. Pin 9. VC (Supply of the Power Stage). It sup- plies the driver of the external switch and there- fore absorbs a pulsed current. Thus it is recom- mended to place a buffer capacitor (towards PGND, pin 11, as close as possible to the IC) able to sustain these current pulses and in order to avoid them inducing disturbances. This pin can be connected to the buffer capacitor directly or through a resistor, as shown in fig. 25, to control separately the turn-on and turn-off speed of the external switch, typically a Power- MOS. At turn-on the gate resistance is Rg +Rg’ and turn-off is Rg only. Pin 10. OUT (Driver Output). This pin is the out- put of the driver stage of the external power switch. Usually, this will be a PowerMOS, al- though the driver is powerful enough to drive BJT’s (1.6A source, 2A sink, peak). The driver is made up of a totem pole with a high- side NPN Darlington and a low-side VDMOS, and delivers a voltage internally clamped, as shown in fig. 25. Thus it is possible to supply the driver (pin 9) with higher voltages without any problem of damage for the gate oxide of the external MOS, but, of course, the power dissipation on the IC will increase. In UVLO conditions an internal circuit (shown in fig.26) holds the pin low in order to ensure that the external MOS cannot be turned on acciden- tally. The peculiarity of this circuit is its ability to mantain the same sink capability (typically, 20mA @ 1V) from VCC = 0V up to the start-up threshold. When the threshold is exceeded and the L4990 starts operating, VREFOK is pulled high (refer to fig. 26) and the circuit is disabled. It is then possible to omit the ”bleeder” resistor (connected between the gate and the source of the MOS) ordinarily used to prevent undesired switching-on of the external MOS because of some leakage current. Pin 11. PGND (Power Ground). The current loop during the discharge of the gate of the external MOS is closed through this pin. This loop should be as short as possible to reduce EMI and run separately from signal currents return. Pin 12. SGND (Signal Ground). This ground ref- erences the control circuitry of the IC, so all the ground connections of the external parts related to control functions must lead to this pin. In laying out the PCB, care must be taken in preventing switched high currents from flowing through the SGND path. Pin 13. ISEN (Current Sense). This pin is to be connected to the ”hot” lead of the current sense resistor Rsense (being the other one grounded), to get a voltage ramp which is an image of the cur- rent of the switch, (IQ). When this voltage is equal to: OUT Rg DRIVE & CONTROL 13V VC VCC Rg’ PGND Rg(ON)=Rg+Rg’ Rg(OFF)=Rg D97IN497A L4990 9 10 11 8 17 13 (V) Figure25.Turn-on and turn-off speeds adjustment 10 12 SGND OUT VREFOK D97IN538 Figure 26. Pull-Down of the output in UVLO. L4990 - L4990A 12/24 |
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