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L6205PD 数据表(PDF) 13 Page - STMicroelectronics |
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L6205PD 数据表(HTML) 13 Page - STMicroelectronics |
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13 / 21 page ![]() 13/21 L6205 PARALLELED OPERATION The outputs of the L6205 can be paralleled to increase the output current capability or reduce the power dissi- pation in the device at a given current level. It must be noted, however, that the internal wire bond connections from the die to the power or sense pins of the package must carry current in both of the associated half bridges. When the two halves of one full bridge (for example OUT1A and OUT2A) are connected in parallel, the peak current rating is not increased since the total current must still flow through one bond wire on the power supply or sense pin. In addition, the over current detection senses the sum of the current in the upper devices of each bridge (A or B) so connecting the two halves of one bridge in parallel does not increase the over current detec- tion threshold. For most applications the recommended configuration is Half Bridge 1 of Bridge A paralleled with the Half Bridge 1 of the Bridge B, and the same for the Half Bridges 2 as shown in Figure 12. The current in the two devices connected in parallel will share very well since the RDS(ON) of the devices on the same die is well matched. In this configuration the resulting Bridge has the following characteristics. - Equivalent Device: FULL BRIDGE - RDS(ON) 0.15Ω Typ. Value @ TJ = 25°C - 5.6A max RMS Load Current - 11.2A OCD Threshold Figure 12. Parallel connection for higher current To operate the device in parallel and maintain a lower over current threshold, Half Bridge 1 and the Half Bridge 2 of the Bridge A can be connected in parallel and the same done for the Bridge B as shown in Figure 13. In this configuration, the peak current for each half bridge is still limited by the bond wires for the supply and sense pins so the dissipation in the device will be reduced, but the peak current rating is not increased. This configu- ration, the resulting bridge has the following characteristics. - Equivalent Device: FULL BRIDGE - RDS(ON) 0.15Ω Typ. Value @ TJ = 25°C - 2.8A max RMS Load Current - 5.6A OCD Threshold OUT1A 4 7 16 15 18 13 OUT1B GND GND GND GND OUT2B OUT2A VSA POWER GROUND SIGNAL GROUND + - VS 8-52VDC VSB VCP VBOOT C1 SENSEA 17 6 5 ENB 11 14 3 12 19 SENSEB LOAD 8 ENA CEN REN EN 20 D02IN1359 1 IN2 IN1A IN2B 10 IN1B 9 IN2A IN1 2 CP CBOOT RP D2 D1 C2 |
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