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L6205PD 数据表(PDF) 13 Page - STMicroelectronics

部件名 L6205PD
功能描述  DMOS DUAL FULL BRIDGE DRIVER
PDF  21 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

L6205PD 数据表(HTML) 13 Page - STMicroelectronics

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L6205
PARALLELED OPERATION
The outputs of the L6205 can be paralleled to increase the output current capability or reduce the power dissi-
pation in the device at a given current level. It must be noted, however, that the internal wire bond connections
from the die to the power or sense pins of the package must carry current in both of the associated half bridges.
When the two halves of one full bridge (for example OUT1A and OUT2A) are connected in parallel, the peak
current rating is not increased since the total current must still flow through one bond wire on the power supply
or sense pin. In addition, the over current detection senses the sum of the current in the upper devices of each
bridge (A or B) so connecting the two halves of one bridge in parallel does not increase the over current detec-
tion threshold.
For most applications the recommended configuration is Half Bridge 1 of Bridge A paralleled with the Half Bridge
1 of the Bridge B, and the same for the Half Bridges 2 as shown in Figure 12. The current in the two devices
connected in parallel will share very well since the RDS(ON) of the devices on the same die is well matched.
In this configuration the resulting Bridge has the following characteristics.
- Equivalent Device: FULL BRIDGE
- RDS(ON) 0.15Ω Typ. Value @ TJ = 25°C
- 5.6A max RMS Load Current
- 11.2A OCD Threshold
Figure 12. Parallel connection for higher current
To operate the device in parallel and maintain a lower over current threshold, Half Bridge 1 and the Half Bridge
2 of the Bridge A can be connected in parallel and the same done for the Bridge B as shown in Figure 13. In
this configuration, the peak current for each half bridge is still limited by the bond wires for the supply and sense
pins so the dissipation in the device will be reduced, but the peak current rating is not increased. This configu-
ration, the resulting bridge has the following characteristics.
- Equivalent Device: FULL BRIDGE
- RDS(ON) 0.15Ω Typ. Value @ TJ = 25°C
- 2.8A max RMS Load Current
- 5.6A OCD Threshold
OUT1A
4
7
16
15
18
13
OUT1B
GND
GND
GND
GND
OUT2B
OUT2A
VSA
POWER
GROUND
SIGNAL
GROUND
+
-
VS
8-52VDC
VSB
VCP
VBOOT
C1
SENSEA
17
6
5
ENB
11
14
3
12
19
SENSEB
LOAD
8
ENA
CEN
REN
EN
20
D02IN1359
1
IN2
IN1A
IN2B
10
IN1B
9
IN2A
IN1
2
CP
CBOOT
RP
D2
D1
C2



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