L6205PD datasheet(5/21 Pages) STMICROELECTRONICS

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L6205

ELECTRICAL CHARACTERISTICS

(Tamb = 25 °C, Vs = 48V, unless otherwise specified)

Symbol

Parameter

Test Conditions

Min

Typ

Max

Unit

VSth(ON) Turn-on Threshold

6.6

7.4

VSth(OFF) Turn-off Threshold

5.6

6.4

Quiescent Supply Current

All Bridges OFF;

Tj = -25°C to 125°C

(7)

510

Tj(OFF)

Thermal Shutdown Temperature

165

°C

Output DMOS Transistors

RDS(ON) High-Side Switch ON Resistance Tj = 25 °C

0.34

0.4

Ω

Tj =125 °C

(7)

0.53

0.59

Ω

Low-Side Switch ON Resistance

Tj = 25 °C

0.28

0.34

Ω

Tj =125 °C

(7)

0.47

0.53

Ω

IDSS

Leakage Current

EN = Low; OUT = VS

2mA

EN = Low; OUT = GND

-0.15

Source Drain Diodes

VSD

Forward ON Voltage

ISD = 2.8A, EN = LOW

1.15

1.3

trr

Reverse Recovery Time

If = 2.8A

300

tfr

Forward Recovery Time

200

Logic Input

VIL

Low level logic input voltage

-0.3

0.8

VIH

High level logic input voltage

IIL

Low Level Logic Input Current

GND Logic Input Voltage

-10

µA

IIH

High Level Logic Input Current

7V Logic Input Voltage

µA

Vth(ON)

Turn-on Input Threshold

1.8

2.0

Vth(OFF)

Turn-off Input Threshold

0.8

1.3

Vth(HYS)

Input Threshold Hysteresis

0.25

0.5

Switching Characteristics

tD(on)EN

Enable to out turn ON delay time (8)

ILOAD =2.8A, Resistive Load

100

250

400

tD(on)IN

Input to out turn ON delay time

ILOAD =2.8A, Resistive Load

(dead time included)

1.6

µs

tRISE

Output rise time(8)

ILOAD =2.8A, Resistive Load

250

tD(off)EN

Enable to out turn OFF delay time (8) ILOAD =2.8A, Resistive Load

300

550

800

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