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L6206PD 数据表(PDF) 13 Page - STMicroelectronics

部件名 L6206PD
功能描述  DMOS DUAL FULL BRIDGE DRIVER
PDF  23 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

L6206PD 数据表(HTML) 13 Page - STMicroelectronics

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L6206
APPLICATION INFORMATION
A typical application using L6206 is shown in Fig. 12. Typical component values for the application are shown
in Table 2. A high quality ceramic capacitor in the range of 100 to 200 nF should be placed between the power
pins (VSA and VSB) and ground near the L6206 to improve the high frequency filtering on the power supply and
reduce high frequency transients generated by the switching. The capacitors connected from the ENA/OCDA
and ENB/OCDB nodes to ground set the shut down time for the Brgidge A and Bridge B respectively when an
over current is detected (see Overcurrent Protection). The two current sources (SENSEA and SENSEB) should
be connected to Power Ground with a trace length as short as possible in the layout. To increase noise immu-
nity, unused logic pins are best connected to 5V (High Logic Level) or GND (Low Logic Level) (see pin descrip-
tion). It is recommended to keep Power Ground and Signal Ground separated on PCB.
Table 2. Component Values for Typical Application
Figure 12. Typical Application
C1
100uF
D1
1N4148
C2
100nF
D2
1N4148
CBOOT
220nF
RCLA
5K
CP
10nF
RCLB
5K
CENA
5.6nF
RENA
100k
CENB
5.6nF
RENB
100k
CREF
68nF
RP
100
CP
CBOOT
RP
D2
D1
C2
OUT1A
LOADA
LOADB
OCDA
OCDB
1
5
21
18
19
8
16
OUT2A
GND
GND
GND
GND
PROGCLA
OUT2B
OUT1B
VSA
POWER
GROUND
SIGNAL
GROUND
+
-
VS
8-52VDC
4
VSB
VCP
VBOOT
C1
SENSEA
20
IN1A
IN2A
IN1A
IN2A
2
6
7
9
ENA
ENB
CENB
RENB
RENA
ENA
ENB
23
IN2B
12
IN1B
IN2B
IN1B
11
14
24
17
3
15
22
SENSEB
RCLA
10
CENA
PROGCLB
13
RCLB
D02IN1344



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