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L6206PD 数据表(PDF) 14 Page - STMicroelectronics

部件名 L6206PD
功能描述  DMOS DUAL FULL BRIDGE DRIVER
PDF  23 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

L6206PD 数据表(HTML) 14 Page - STMicroelectronics

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L6206
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PARALLELED OPERATION
The outputs of the L6206 can be paralleled to increase the output current capability or reduce the power dissi-
pation in the device at a given current level. It must be noted, however, that the internal wire bond connections
from the die to the power or sense pins of the package must carry current in both of the associated half bridges.
When the two halves of one full bridge (for example OUT1A and OUT2A) are connected in parallel, the peak
current rating is not increased since the total current must still flow through one bond wire on the power supply
or sense pin. In addition the over current detection senses the sum of the current in the upper devices of each
bridge (A or B) so connecting the two halves of one bridge in parallel does not increase the over current detec-
tion threshold.
For most applications the recommended configuration is Half Bridge 1 of Bridge A paralleled with the Half Bridge
1 of the Bridge B, and the same for the Half Bridges 2 as shown in Figure 13. The current in the two devices
connected in parallel will share very well since the RDS(ON) of the devices on the same die is well matched.
When connected in this configuration the over current detection circuit, which senses the current in each bridge
(A and B), will sense the current in upper devices connected in parallel independently and the sense circuit with
the lowest threshold will trip first. With the enables connected in parallel, the first detection of an over current in
either upper DMOS device will turn of both bridges. Assuming that the two DMOS devices share the current
equally, the resulting over current detection threshold will be twice the minimum threshold set by the resistors
RCLA or RCLB in figure 13. It is recommended to use RCLA = RCLB.
In this configuration the resulting Bridge has the following characteristics.
- Equivalent Device: FULL BRIDGE
- RDS(ON) 0.15Ω Typ. Value @ TJ = 25°C
- 5.6A max RMS Load Current
- 11.2A max OCD Threshold
Figure 13. Parallel connection for higher current
CP
CBOOT
RP
D2
D1
C2
OUT1A
LOAD
OCDA
OCDB
1
5
21
18
19
8
16
OUT2A
GND
GND
GND
GND
PROGCLA
OUT2B
OUT1B
VSA
POWER
GROUND
SIGNAL
GROUND
+
-
VS
8-52VDC
4
VSB
VCP
VBOOT
C1
SENSEA
20
IN2
IN1A
IN2B
12
6
7
9
ENA
ENB
REN
EN
23
IN1B
11
IN2A
IN1
2
14
24
17
3
15
22
SENSEB
RCLA
10
CEN
PROGCLB
13
RCLB
D02IN1364



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