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25CS160-H/MS 数据表(PDF) 21 Page - Microchip Technology

部件名 25CS160-H/MS
功能描述  16-Kbit SPI Serial EEPROM with 128-Bit Serial Number
PDF  53 Pages
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制造商  MICROCHIP [Microchip Technology]
网页  http://www.microchip.com
标志 MICROCHIP - Microchip Technology

25CS160-H/MS 数据表(HTML) 21 Page - Microchip Technology

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 2026 Microchip Technology Inc. and its subsidiaries
Preliminary
DS20007008B-page 21
25CS160
6.1.3
WRITE ENABLE LATCH
Enabling and disabling writing to any nonvolatile
register, the EEPROM array, and the Security register
is accomplished through the Write Enable (WREN)
instruction, as shown in Section 5.1 “Write Enable
Instruction (WREN)”, and the Write Disable (WRDI)
instruction, as shown in Section 5.2 “Write Disable
(WRDI) Instruction”. These functions change the
state of the Write Enable Latch (WEL) bit (byte 0, bit 1)
in the STATUS register.
A logic ‘1’ bit indicates that the device is currently busy
performing a nonvolatile write sequence. During this
time, only the Read STATUS Register (RDSR)
instruction will be executed by the device.
A logic ‘0’ bit in this position indicates the device is
ready to accept new instructions.
6.1.4
READY/BUSY STATUS LATCH
The Ready/Busy Status Latch (RDY/BSY) is used to
indicate whether the device is currently active in a
nonvolatile write sequence. This bit is read-only and
automatically updated by the device. It is provided in bit
0 of both STATUS register bytes.
A logic ‘1’ bit indicates that the device is currently busy
performing a nonvolatile write sequence. During this
time, only the Read STATUS Register (RDSR) and the
Write Ready/Busy Poll (WRBP) instructions will be
executed by the device.
A logic ‘0’ bit in this position indicates the device is
ready to accept new instructions.
6.1.5
ERROR CORRECTION STATE
LATCH
The Error Correction State (ECS) bit indicates whether
the on-chip Error Correction Code (ECC) logic scheme
was invoked during the previous read sequence. For
more information related to ECC, refer to Section 8.2
“Error Correction Code (ECC) Architecture”.
The ECS bit will be set to logic ‘0’ unless the previously
executed read sequence required the use of the ECC
logic scheme. When this occurs, the ECS bit will be set
to logic ‘1’.
The ECS bit will continue to read a logic ‘1’ until another
read sequence occurs where the use of the ECC logic
scheme is not required, a Power-On Reset (POR)
event occurs or a Software Device Reset (SRST)
instruction is sent to the 25CS160.
6.1.6
WRITE LOCKOUT STATE BIT
The Write Lockout State (WLS) bit is located in byte 1,
bit 2 of the STATUS register. This bit indicates whether
the last write sequence was inhibited by the UVLO
detection circuit (see Section 10.0 “Programmable
UnderVoltage Lockout”).
A logic ‘1’ in this bit position indicates that the previous
write sequence was inhibited by UVLO. A logic ‘0’
indicates the previous write sequence was not inhibited
by UVLO.
The WLS bit will continue to read out a logic ‘1’ until one
of the following occurs:
• A Power-On Reset (POR) event occurs
(Section 1.1.1 “Device Power-On Reset”)
• A nonvolatile write opcode is sent to the device
(WRITE, WRSR, WREX, LOCK, WUVL)
• A Software Device Reset (SRST) instruction is
executed
6.2
Read STATUS Register (RDSR)
The Read STATUS Register (RDSR) instruction
provides access to the contents of the STATUS
register. The STATUS register is read by asserting the
CS pin and then sending a 05h opcode. The device will
return the 16-bit STATUS register value on the SO pin.
The STATUS register can be continuously read for data
by continuing to read beyond the first 8-bit value
returned. The 25CS160 will update the value of the
RDY/BSY and WEL bits in the STATUS register upon
the completion of every eight bits, thereby allowing new
STATUS register values to be read without having to
issue a new RDSR instruction.
A new RDSR instruction needs to be initiated for the
nonvolatile bits (WPEN, BP0 and BP1) in the STATUS
register to be updated.
Note:
The Write Lockout State (WLS) bit is only
valid if the undervoltage lockout function is
enabled.



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