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25CS160-H/MS 数据表(PDF) 21 Page - Microchip Technology |
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25CS160-H/MS 数据表(HTML) 21 Page - Microchip Technology |
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21 / 53 page ![]() 2026 Microchip Technology Inc. and its subsidiaries Preliminary DS20007008B-page 21 25CS160 6.1.3 WRITE ENABLE LATCH Enabling and disabling writing to any nonvolatile register, the EEPROM array, and the Security register is accomplished through the Write Enable (WREN) instruction, as shown in Section 5.1 “Write Enable Instruction (WREN)”, and the Write Disable (WRDI) instruction, as shown in Section 5.2 “Write Disable (WRDI) Instruction”. These functions change the state of the Write Enable Latch (WEL) bit (byte 0, bit 1) in the STATUS register. A logic ‘1’ bit indicates that the device is currently busy performing a nonvolatile write sequence. During this time, only the Read STATUS Register (RDSR) instruction will be executed by the device. A logic ‘0’ bit in this position indicates the device is ready to accept new instructions. 6.1.4 READY/BUSY STATUS LATCH The Ready/Busy Status Latch (RDY/BSY) is used to indicate whether the device is currently active in a nonvolatile write sequence. This bit is read-only and automatically updated by the device. It is provided in bit 0 of both STATUS register bytes. A logic ‘1’ bit indicates that the device is currently busy performing a nonvolatile write sequence. During this time, only the Read STATUS Register (RDSR) and the Write Ready/Busy Poll (WRBP) instructions will be executed by the device. A logic ‘0’ bit in this position indicates the device is ready to accept new instructions. 6.1.5 ERROR CORRECTION STATE LATCH The Error Correction State (ECS) bit indicates whether the on-chip Error Correction Code (ECC) logic scheme was invoked during the previous read sequence. For more information related to ECC, refer to Section 8.2 “Error Correction Code (ECC) Architecture”. The ECS bit will be set to logic ‘0’ unless the previously executed read sequence required the use of the ECC logic scheme. When this occurs, the ECS bit will be set to logic ‘1’. The ECS bit will continue to read a logic ‘1’ until another read sequence occurs where the use of the ECC logic scheme is not required, a Power-On Reset (POR) event occurs or a Software Device Reset (SRST) instruction is sent to the 25CS160. 6.1.6 WRITE LOCKOUT STATE BIT The Write Lockout State (WLS) bit is located in byte 1, bit 2 of the STATUS register. This bit indicates whether the last write sequence was inhibited by the UVLO detection circuit (see Section 10.0 “Programmable UnderVoltage Lockout”). A logic ‘1’ in this bit position indicates that the previous write sequence was inhibited by UVLO. A logic ‘0’ indicates the previous write sequence was not inhibited by UVLO. The WLS bit will continue to read out a logic ‘1’ until one of the following occurs: • A Power-On Reset (POR) event occurs (Section 1.1.1 “Device Power-On Reset”) • A nonvolatile write opcode is sent to the device (WRITE, WRSR, WREX, LOCK, WUVL) • A Software Device Reset (SRST) instruction is executed 6.2 Read STATUS Register (RDSR) The Read STATUS Register (RDSR) instruction provides access to the contents of the STATUS register. The STATUS register is read by asserting the CS pin and then sending a 05h opcode. The device will return the 16-bit STATUS register value on the SO pin. The STATUS register can be continuously read for data by continuing to read beyond the first 8-bit value returned. The 25CS160 will update the value of the RDY/BSY and WEL bits in the STATUS register upon the completion of every eight bits, thereby allowing new STATUS register values to be read without having to issue a new RDSR instruction. A new RDSR instruction needs to be initiated for the nonvolatile bits (WPEN, BP0 and BP1) in the STATUS register to be updated. Note: The Write Lockout State (WLS) bit is only valid if the undervoltage lockout function is enabled. |
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