25CS160-HSLASHMS datasheet(7/53 Pages) MICROCHIP

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Preliminary

DS20007008B-page 7

25CS160

FIGURE 1-1:

INPUT TEST WAVEFORMS

AND MEASUREMENT

LEVELS

FIGURE 1-2:

OUTPUT TEST LOAD

THH

HOLD Hold Time

5—

VCC ≥ 4.5V, TAMB ≤ +125°C

—

VCC ≥ 2.5V

—

VCC ≥ 1.7V

THZ

HOLD Low to Output

High Z

—30

VCC ≥ 4.5V, TAMB ≤ +125°C (Note 1)

—60

VCC ≥ 2.5V (Note 1)

—

160

VCC ≥ 1.7V (Note 1)

THV

HOLD High to Output Valid

—30

VCC ≥ 4.5V, TAMB ≤ +125°C

—60

VCC ≥ 2.5V

—

160

VCC ≥ 1.7V

TUVL

UVLO Detection Time

—

µs

TWC

Internal Write Cycle Time

—

Note 2

TABLE 1-2:

AC CHARACTERISTICS (CONTINUED)

AC CHARACTERISTICS

Electrical Characteristics:

Industrial (I): TAMB = -40°C to +85°C

VCC = 1.7V to 5.5V

Extended (E): TAMB = -40°C to +125°C VCC = 1.8V to 5.5V

Extended (H): TAMB = -40°C to +150°C VCC = 2.5V to 5.5V

Param.

No.

Symbol

Characteristic

Min.

Max.

Units

Test Conditions

Note 1: This parameter is not 100% tested but is ensured by characterization.

2: TWC begins on the rising edge of CS after a valid write sequence and ends when the internal write cycle is

complete.

0.9 VCC

0.1 VCC

VCC/2

Measurement

Level

Driving

Level

Note:

tR, tF < 2 ns (10% to 90%)

Device

under

Test

30 pF

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