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STM32L4P5CEU6P 数据表(PDF) 197 Page - STMicroelectronics |
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STM32L4P5CEU6P 数据表(HTML) 197 Page - STMicroelectronics |
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197 / 311 page ![]() DS12903 Rev 2 197/311 STM32L4P5xx Electrical characteristics 277 6.3.10 Flash memory characteristics Table 64. Flash memory characteristics(1) 1. Guaranteed by design. Symbol Parameter Conditions Typ Max Unit tprog 64-bit programming time - 81.69 83.35 µs tprog_row One row (64 double word) programming time Normal programming 5.23 5.33 ms Fast programming 3.80 3.88 tprog_page One page (4 Kbytes) programming time Normal programming 41.82 42.68 Fast programming 30.39 31.01 tERASE Page (4 Kbytes) erase time - 22.02 24.47 tprog_bank One bank (512 Kbytes) programming time Normal programming 5.35 5.46 s Fast programming 3.89 3.97 tME Mass erase time (one or two banks) - 22.13 24.59 ms IDD Average consumption from VDD Write mode 3.4 - mA Erase mode 3.4 - Maximum current (peak) Write mode 7 (for 6 µs) - Erase mode 7 (for 67 µs) - Table 65. Flash memory endurance and data retention Symbol Parameter Conditions Min(1) 1. Guaranteed by characterization results. Unit NEND Endurance TA = –40 to +105 °C 10 kcycles tRET Data retention 1 kcycle(2) at TA = 85 °C 2. Cycling performed over the whole temperature range. 30 Years 1 kcycle(2) at TA = 105 °C 15 1 kcycle(2) at TA = 125 °C 7 10 kcycles(2) at TA = 55 °C 30 10 kcycles(2) at TA = 85 °C 15 10 kcycles(2) at TA = 105 °C 10 |
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