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STM32L4P5CEU6P 数据表(PDF) 199 Page - STMicroelectronics |
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STM32L4P5CEU6P 数据表(HTML) 199 Page - STMicroelectronics |
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199 / 311 page  DS12903 Rev 2 199/311 STM32L4P5xx Electrical characteristics 277 Prequalification trials Most of the common failures (unexpected reset and program counter corruption) can be reproduced by manually forcing a low state on the NRST pin or the Oscillator pins for 1 second. To complete these trials, ESD stress can be applied directly on the device, over the range of specification values. When unexpected behavior is detected, the software can be hardened to prevent unrecoverable errors occurring (see application note AN1015). Electromagnetic Interference (EMI) The electromagnetic field emitted by the device are monitored while a simple application is executed (toggling 2 LEDs through the I/O ports). This emission test is compliant with IEC 61967-2 standard which specifies the test board and the pin loading. Table 67. EMI characteristics Symbol Parameter Conditions Monitored frequency band Max vs. [fHSE/fHCLK] Unit 8 MHz/120 MHz SEMI Peak level Vdd=3.6 V, TA =25°C, LQFP144 package, conforming to IEC61967-2 0.1 MHz to 30 MHz 16 dBμV 30 MHz to 130 MHz 16 130 MHz to 1 GHz 19 1 GHz to 2 GHz 12 EMI Level 3.5 - |
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