STM32L4P5CEU6P datasheet(201/311 Pages) STMICROELECTRONICS

201 / 311 page

DS12903 Rev 2

201/311

STM32L4P5xx

Electrical characteristics

277

Functional susceptibility to I/O current injection

While a simple application is executed on the device, the device is stressed by injecting

current into the I/O pins programmed in floating input mode. While current is injected into

the I/O pin, one at a time, the device is checked for functional failures.

The failure is indicated by an out of range parameter: ADC error above a certain limit (higher

than 5 LSB TUE), out of conventional limits of induced leakage current on adjacent pins (out

of the -5 µA/+0 µA range) or other functional failure (for example reset occurrence or

oscillator frequency deviation).

The characterization results are given in Table 70.

Negative induced leakage current is caused by negative injection and positive induced

leakage current is caused by positive injection.

6.3.14

I/O port characteristics

General input/output characteristics

Unless otherwise specified, the parameters given in Table 71 are derived from tests

performed under the conditions summarized in Table 21: General operating conditions. All

I/Os are designed as CMOS- and TTL-compliant.

Table 70. I/O current injection susceptibility

Symbol

Description

Functional

susceptibility

Unit

Negative

injection

Positive

injection

IINJ(1)

1. Guaranteed by characterization.

Injected current on all pins except TT_x

-5

Injected current on pins PD7, OPAMP1_VINM,

OPAMP2_VINM

0NA

Injected current on TT_ax pins

-5

Table 71. I/O static characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

VIL(1)

I/O input low level

voltage

1.62 V<VDDIOx<3.6 V

0.3xVDDIOX

(2)

I/O input low level

voltage

1.62 V<VDDIOx<3.6 V

0.39xVDDIOX-0.06

(3)

I/O input low level

voltage

1.08 V<VDDIOx<1.62 V

0.43xVDDIOX-0.1

(3)

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