STS9D8NH3LL datasheet(1/14 Pages) STMICROELECTRONICS

部件名	STS9D8NH3LL

功能描述	Dual N-channel 30 V - 0.012 Ω - 9 A - SO-8 low on-resistance STripFET™Power MOSFET

PDF	14 Pages

Scroll/Zoom	100%

制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

标志

1 / 14 page

December 2007

Rev 3

1/14

14

STS9D8NH3LL

Dual N-channel 30 V - 0.012

Ω - 9 A - SO-8

low on-resistance STripFET™ Power MOSFET

Features

■ Optimal RDS(on) x Qg trade-off @ 4.5V

■ Conduction losses reduced

■ Switching losses reduced

Application

■ Switching applications

Description

This device uses the latest advanced design rules

of ST’s STrip based technology. The Q1 and Q2

transistors, show respectively, the best gate

charge and on-resistance for minimizing the

switching and conduction losses. This application

specific Power MOSFET has been designed to

replace two SO-8 packages in DC-DC converters.

Figure 1.

Internal schematic diagram

Type

VDSS

RDS(on)

Qg

ID

STS9D8NH3LL

Q1

30V

< 0.022

Ω 7nC

8A

Q2

30V

< 0.015

Ω 8nC

9A

S0-8

Table 1.

Device summary

Order code

Marking

Package

Packaging

STS9D8NH3LL

9D8H3LL-

SO-8

Tape & reel

www.st.com

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