STS9D8NH3LL datasheet(4/14 Pages) STMICROELECTRONICS

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Electrical characteristics

STS9D8NH3LL

4/14

Electrical characteristics

(TCASE=25°C unless otherwise specified)

Table 4.

On/off states

Symbol

Parameter

Test conditions

Type

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source

Breakdown voltage

ID = 250 µA, VGS = 0

IDSS

Zero gate voltage

Drain current (VGS = 0)

VDS = Max rating

µA

IDSS

Zero gate voltage

Drain current (VGS = 0)

VDS =Max rating

@125°C

µA

IGSS

Gate-body leakage

current (VDS = 0)

VGS = ± 16 V

±100

VGS(th)

Gate threshold voltage

VDS = VGS,

ID = 250 µA

RDS(on)

Static drain-source on

resistance

VGS = 10 V, ID = 4 A

VGS = 10 V, ID = 4.5 A

0.018

0.012

0.022

0.015

Ω

RDS(on)

Static drain-source on

resistance

VGS = 4.5 V, ID = 4 A

VGS = 4.5 V, ID = 4.5 A

0.020

0.014

0.025

0.0175

Ω

Table 5.

Dynamic

Symbol

Parameter

Test conditions

Type

Min.

Typ.

Max.

Unit

Ciss

Input capacitance

VDS = 25 V, f = 1 MHz,

VGS = 0

857

1070

Coss

Output capacitance

147

290

Crss

Reverse transfer

capacitance

Total gate charge

VDD = 15 V, ID = 8 A,

VGS = 4.5 V

(see Figure 25)

Qgs

Gate-source charge

2.5

Qgd

Gate-drain charge

2.3

2.8

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