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STS9D8NH3LL 数据表(PDF) 5 Page - STMicroelectronics

部件名 STS9D8NH3LL
功能描述  Dual N-channel 30 V - 0.012 Ω - 9 A - SO-8 low on-resistance STripFET™Power MOSFET
PDF  14 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STS9D8NH3LL 数据表(HTML) 5 Page - STMicroelectronics

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STS9D8NH3LL
Electrical characteristics
5/14
Table 6.
Switching times
Symbol
Parameter
Test conditions
Type
Min.
Typ.
Max.
Unit
td(on)
tr
Turn-on delay time
Rise time
VDD=15 V, ID=4 A,
RG=4.7 Ω,
VGS= 4.5 V
(see Figure 27)
Q1
Q2
Q1
Q2
12
8.2
14.5
6
ns
ns
ns
ns
td(off)
tf
Turn-off delay time
Fall time
VDD=15 V, ID=4 A,
RG=4.7 Ω,
VGS= 4.5V
(see Figure 27)
Q1
Q2
Q1
Q2
23
27.8
8
3.6
ns
ns
ns
ns
Table 7.
Source drain diode
Symbol
Parameter
Test conditions
Type
Min
Typ.
Max
Unit
ISD
Source-drain current
VDD=15 V, ID=4 A
RG=4.7 Ω,
VGS=4.5 V
Q1
Q2
8
9
A
A
ISDM
(1)
1.
Pulse width limited by safe operating area.
Source-drain current
(pulsed)
VDD=15 V, ID= 4A
RG=4.7 Ω,
VGS=4.5 V
Q1
Q2
32
36
A
A
VSD
(2)
2.
Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
Forward on voltage
ISD = 8 A, VGS = 0
Q1
Q2
1.5
1.5
V
V
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 8 A,
VDD = 15 V
di/dt = 100 A/µs,
Tj = 150°C
(see Figure 26)
Q1
Q2
Q1
Q2
Q1
Q2
15
22.8
5.7
14.9
0.76
1.3
ns
ns
nC
nC
A
A



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