STB50NF25 datasheet(3/14 Pages) STMICROELECTRONICS

部件名	STB50NF25

功能描述	N-channel 250V - 0.055Ω - 45A - D2PAK - TO-220 low gate charge STripFET??Power MOSFET

PDF	14 Pages

Scroll/Zoom	100%

制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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3 / 14 page

STB50NF25 - STP50NF25

Electrical ratings

3/14

Electrical ratings

Table 2.

Absolute maximum ratings

Symbol

Parameter

Value

Unit

VDS

Drain-source voltage

250

VGS

Gate-source voltage

±20

(1)

Value limited by wire bonding

Drain current (continuous) at TC = 25 °C

(1)

Drain current (continuous) at TC = 100 °C

IDM

(2)

Pulse width limited by safe operating area

Drain current (pulsed)

180

PTOT

Total dissipation at TC = 25 °C

160

Derating factor

1.28

W/°C

dv/dt (3)

ISD ≤ 45 A, di/dt ≤ 200 A/µs, VDD = 80% V(BR)DSS

Peak diode recovery voltage slope

V/ns

Tstg

Operating junction temperature

Storage temperature

-55 to 150

°C

Table 3.

Thermal data

Symbol

Parameter

Value

Unit

Rthj-case

Thermal resistance junction-case max

0.78

°C/W

Rthj-amb

Thermal resistance junction-amb max

62.5

°C/W

Maximum lead temperature for soldering purpose

300

°C

Table 4.

Avalanche data

Symbol

Parameter

Value

Unit

IAR

(1)

Pulse width limited by Tjmax

Avalanche current, repetitive or not-repetitive

EAS

(2)

Starting TJ= 25 °C, ID = IAR, VDD = 50 V

Single pulse avalanche energy

160

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