STB50NF25 datasheet(4/14 Pages) STMICROELECTRONICS

部件名	STB50NF25

功能描述	N-channel 250V - 0.055Ω - 45A - D2PAK - TO-220 low gate charge STripFET??Power MOSFET

PDF	14 Pages

Scroll/Zoom	100%

制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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4 / 14 page

Electrical characteristics

STB50NF25 - STP50NF25

4/14

Electrical characteristics

(TCASE=25°C unless otherwise specified)

Table 5.

On/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown

voltage

ID = 1 mA, VGS= 0

250

IDSS

Zero gate voltage drain

current (VGS = 0)

VDS = Max rating,

VDS = Max rating @125 °C

µA

IGSS

Gate body leakage current

(VDS = 0)

VGS = ±20 V

100

VGS(th)

Gate threshold voltage

VDS= VGS, ID = 250 µA

RDS(on)

Static drain-source on

resistance

VGS= 10 V, ID= 22 A

0.055

0.069

Ω

Table 6.

Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

gfs

(1)

Pulsed: pulse duration=300µs, duty cycle 1.5%

Forward transconductance

VDS =10 V, ID = 22 A

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS =25 V, f=1 MHz,

VGS=0

2670

465

70.5

Qgs

Qgd

Total gate charge

Gate-source charge

Gate-drain charge

VDD=200 V, ID = 45 A

VGS =10 V

(see Figure 14)

68.2

12.2

33.4

Gate input resistance

f=1 MHz Gate Bias, Bias=0

Test signal level=20 mV

open drain

1.1

Ω

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