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STB50NF25 数据表(PDF) 5 Page - STMicroelectronics

部件名 STB50NF25
功能描述  N-channel 250V - 0.055Ω - 45A - D2PAK - TO-220 low gate charge STripFET??Power MOSFET
PDF  14 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STB50NF25 数据表(HTML) 5 Page - STMicroelectronics

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STB50NF25 - STP50NF25
Electrical characteristics
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Table 7.
Switching times
Symbol
Parameter
Test conditions
Min
Typ
Max
Unit
td(on)
tr
Turn-on delay time
Rise time
VDD = 125 V, ID = 22 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 13)
45
26
ns
ns
td(off)
tf
Off-voltage rise time
Fall time
VDD = 125 V, ID = 22 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 13)
63
20
ns
ns
Table 8.
Source drain diode
Symbol
Parameter
Test conditions
Min
Typ
Max
Unit
ISD
ISDM
Source-drain current
Source-drain current (pulsed)
45
180
A
A
VSD
Forward on voltage
ISD = 45 A, VGS = 0
1.5
V
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD= 45 A, di/dt = 100 A/µs,
VDD = 60 V (see Figure 18)
198
1.5
15
ns
µC
A
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 45 A, di/dt = 100 A/µs,
VDD = 60 V, Tj = 150 °C
(see Figure 18)
256
2.2
17
ns
µC
A



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