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STM32L462CEU6 数据表(PDF) 104 Page - STMicroelectronics |
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STM32L462CEU6 数据表(HTML) 104 Page - STMicroelectronics |
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104 / 198 page  IDD_ALL (SRAM2)(3) Supply current to be added in Standby mode when SRAM2 is retained - 1.8 V 250 730 2700 6350 13850 575 1800 6350 14500 32000 nA 2.4 V 255 745 2700 6150 14000 620 1800 6450 14500 32000 3 V 270 740 2700 6450 13500 645 1850 6500 15000 32500 3.6 V 410 755 2800 6500 13500 790 1950 6500 15000 33000 IDD_ALL (wakeup from Standby) Supply current during wakeup from Standby mode Wakeup clock is MSI = 4 MHz. See (4). 3 V 2.00 - - - - - - --- mA 1. Guaranteed by characterization results, unless otherwise specified. 2. Based on characterization done with a 32.768 kHz crystal (MC306-G-06Q-32.768, manufacturer JFVNY) with two 6.8 pF loading capacitors. 3. The supply current in Standby with SRAM2 mode is: IDD_ALL(Standby) + IDD_ALL(SRAM2). The supply current in Standby with RTC with SRAM2 mode is: IDD_ALL(Standby + RTC) + IDD_ALL(SRAM2). 4. Wakeup with code execution from Flash. Average value given for a typical wakeup time as specified in Table 39: Low-power mode wakeup timings. Table 35. Current consumption in Standby mode (continued) Symbol Parameter Conditions TYP MAX(1) Unit -VDD 25 °C 55 °C 85 °C 105 °C 125 °C 25 °C 55 °C 85 °C 105 °C 125 °C Table 36. Current consumption in Shutdown mode Symbol Parameter Conditions TYP MAX(1) Unit -VDD 25 °C 55 °C 85 °C 105 °C 125 °C 25 °C 55 °C 85 °C 105 °C 125 °C IDD_ALL (Shutdown) Supply current in Shutdown mode (backup registers retained) RTC disabled - 1.8 V 19.0 120 720 2200 6400 38.0 350 2050 6350 19500 nA 2.4 V 26.0 145 855 2600 7450 62.0 400 2400 7450 22500 3 V 37.0 185 1050 3100 8700 105 500 2850 8750 26000 3.6 V 67.0 260 1350 3950 11000 160 650 3500 10500 30000 |
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