STM32L462CEU6 datasheet(105/198 Pages) STMICROELECTRONICS

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IDD_ALL

(Shutdown

with RTC)

Supply current

in Shutdown

mode

(backup

registers

retained) RTC

enabled

RTC clocked by LSE

bypassed at 32768 Hz

1.8 V

165

275

950

2600

6550

2.4 V

235

370

1150

3100

7650

3 V

325

485

1450

3750

9050

3.6 V

445

655

1900

4800

11500

RTC clocked by LSE

quartz (2) in low drive

mode

1.8 V

290

410

1050

2550

6700

2.4 V

375

515

1250

3050

7800

3 V

480

645

1550

3700

8800

3.6 V

625

840

1950

4950

11500

IDD_ALL

(wakeup from

Shutdown)

Supply current

during wakeup

from Shutdown

mode

Wakeup clock is

MSI = 4 MHz.

See (3).

3 V

1.00

1. Guaranteed by characterization results, unless otherwise specified.

2. Based on characterization done with a 32.768 kHz crystal (MC306-G-06Q-32.768, manufacturer JFVNY) with two 6.8 pF loading capacitors.

3. Wakeup with code execution from Flash. Average value given for a typical wakeup time as specified in Table 39: Low-power mode wakeup timings.

Table 36. Current consumption in Shutdown mode (continued)

Symbol

Parameter

Conditions

TYP

MAX(1)

Unit

-VDD 25 °C 55 °C 85 °C 105 °C 125 °C 25 °C 55 °C 85 °C 105 °C 125 °C

Table 37. Current consumption in VBAT mode

Symbol

Parameter

Conditions

TYP

MAX(1)

Unit

-VBAT

25 °C 55 °C 85 °C

105 °C 125 °C 25 °C

55 °C

85 °C 105 °C 125 °C

IDD_VBAT

(VBAT)

Backup domain

supply current

RTC disabled

1.8 V

3.00

2.4 V

4.00

3 V

5.00

3.6 V

11.0

RTC enabled and

clocked by LSE

bypassed at 32768 Hz

1.8 V

145

165

285

550

2.4 V

205

235

370

670

3 V

285

315

470

820

3.6 V

375

430

715

1350

1. Guaranteed by characterization results, unless otherwise specified.

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